news digest ♦ RF Electronics
New pHEMT process technologies available
RFMD is offering foundry customers the gallium arsenide based processes which are suited to wireless applications.
RF Micro Devices (RFMD), a global designer and manufacturer of high-performance RF components and compound semiconductor technologies has expanded its Foundry Services business unit portfolio of process technologies to include two additional GaAs process technologies.
These are RFMD’s FD25 low noise pHEMT process and its FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies are available immediately to foundry customers.
RFMD’s 0.25-micron FD25 pHEMT process technology delivers low noise, medium power and high linearity for applications including low noise front ends and transmitter MMICs. RFMD’s 0.6-micron FET1H pHEMT process technology delivers low noise and high linearity switching of RF signals for applications including wireless front ends, transmit/receive modules and phased arrays.
The two new process technologies complement RFMD’s existing 0.3-micron FD30 pHEMT process technology, which was made available to foundry customers in 2010 and is optimised for applications including X-band phased array power amplifiers and 8-16 GHz wideband military EW jammers.
The rapid growth in the wireless communications, aerospace and defense, and radar/radar jammer markets continues throughout the world, driven by end applications requiring the higher levels of integration enabled by leading semiconductor technologies.
This increases the need for semiconductor foundries to develop and offer world-class technologies with flexible high performance capabilities. RFMD’s low noise FD25 and high linearity switch FET1H technologies, along with RFMD’s existing FD30 0.3-micron power process technology, offer customers the ability to design and manufacture world-class devices for a wide range of application needs.
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www.compoundsemiconductor.net August/September 2011
Bob Van Buskirk, president of RFMD’s Multi- Market Products Group (MPG), said, “Our FD25 0.25-micron and FET1H 0.6-micron processes further expand on our goal to provide the wireless industry a technically advanced semiconductor foundry service offering. We are pleased to expand and grow our foundry services business beyond our current GaN and GaAs offerings to assist our customers in meeting their individual market and product needs.”
NXP awarded by Assodel for RF and wireless products
The electronic industry award recognises best- in-class manufacturers from design collaboration to distribution. The firm’s products include next generation products based on gallium nitride technology.
The Italian Association for Electronic Suppliers (Assodel) has awarded NXP Semiconductors with the 2011 Best Supplier Award for RF and Wireless.
The award was presented on June 17, at a European industry gala in San Siro, Italy, attended by more than 400 participants from the electronics industry.
Mark Murphy, director of marketing, RF Power, NXP Semiconductors, commented, “This prestigious award not only recognises the strength and success of our High Performance Mixed Signal business model, but also the quality of the people within our Regional Marketing and Sales Teams. It’s a particular honour that this award was voted by a team of jurors from the electronic community, including end customers, distribution, customer supply operations and management. These are our most demanding critics and to be recognised as a best supplier means we are doing our job well and delivering on our promise to solve the most demanding RF challenges.”
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