LEDs ♦ news digest
are fabricated utilising commercial scale deposition tools at RSL’s Nitride Research Centre in Phoenix, Arizona. Silicon substrates have a substantial cost advantage over the more traditional sapphire or SiC substrates typically utilised in LED fabrication.
Efficient long wavelength LEDs are essential milestones in the roadmap for Solid State Lighting (SSL), LED backlighting and next generation display technology. Green or longer wavelength nitride based LEDs are very challenging to fabricate compared to UV and blue LEDs due to decreasing quantum efficiencies and have remained a tough milestone for the LED industry.
RSL plans to eventually package the green and longer wavelength LEDs through its sister company, FlipChip International (FCI). Using its extensive experience in packaging semiconductor power devices, FCI plans to provide a proprietary packaging solution for these LED devices.
RSL scientists have also demonstrated initial tunability of this technology to multi-colour and white light spectrums. This RSL device illustrates great promise due to its potential for high intensity, low energy consumption and a roadmap to a very low commercial cost. RSL believes this technology can be commercialised in 2-3 years with migration to 200mm silicon substrates.
Bob Forcier, CEO, of RSL, stated, “These longer wavelength and green LED breakthrough devices fit perfectly into RSL’s roadmap for disruptive energy innovation at all levels on a global scale and leverages its GaN and InGaN-on-silicon investments.”
Wladek Walukiewicz, CTO, announced, “Green LED’s have been elusive due to material challenges of producing a high efficiency device in the green region and the longer wavelengths of the spectrum…we are quite excited about the potential of this device.”
Common UX4-LEDs Platform
The UX4-LEDs 150-mm wafer full-field projection lithography tool, released last November, has already been used for high-volume manufacturing of LED chips at leading LED manufacturers in Japan, Korea, Taiwan, and China, where it has proved its high performance and high reliability.
The UX4-LEDs FFPL 200 is mounted with a full- field projection lens of 200 mm in diameter on the common UX4-LEDs platform to enable full- field projection exposure of a 200-mm wafer. It can achieve a high throughput of 120 wafers per hour. Unlike the stepper systems that lower their
August/September 2011
www.compoundsemiconductor.net 79
Ushio’s two new “UX4-LEDs” tools prepare for lift off
The new models achieving better cost of ownership by further enhancing productivity and yield for high- volume manufacturing of III-nitride HB LED chips.
Japanese firm Ushio has started shipping what it says is the world’s first 200-mm wafer full-field projection lithography tool “UX4-LEDs FFPL 200” for manufacturing High-Brightness LED chips.
The firm has also completed development of the laser lift-off system “UX4-LEDs LLO 150” for volume manufacturing of vertical-structure LED chips.
The latest models of the UX4-LEDs are based on the same platform as Ushio’s field-proven UX series, which has an installed base of more than 1,100 systems.
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