news digest ♦ compound semiconductor
“We believe that the article represents the perfect argument for employing ammonothermal grown GaN seeds in an HVPE growth process,” stated Dr. Ed Preble, Kyma COO and VP Business Development. “Such a combination represents the ultimate in terms of GaN substrate product quality, cost, and time- to-market.”
Kyma hopes that ammonothermal grown GaN seeds will become commercially available, while in parallel it is developing new HVPE based seed generation techniques that potentially render the foreign substrate a non- issue.
“Our latest HVPE-only seed expansion and boule growth results show great promise and benefit due to recent innovations at Kyma,” added Preble. “Our intent is to develop seeded boule growth processes which effectively put foreign seed based GaN defects and the associated single wafer limited liftoff processes behind us. This will drive GaN prices from over $1000 per 2” wafer down to less than $100 per 2” wafer.”
Additionally, there are many other secondary parameters and growth technology subtleties that are also important with respect to the manufacturability of a GaN growth process, such as the controllability of n-type and compensation doping, the temperature dependence of substrate electrical conductivity, presence of unintentional background impurities, presence of native vacancies and anti-site defects, and the ability to expand the crystal in one or more crystallographic directions. Lastly, 100% recyclability of unused gallium in Kyma’s HVPE growth systems has allowed Kyma to trade off growth efficiency for process stability and speed, eliminating the need to have high efficiency gallium utilization in each growth run. Kyma believes these many secondary issues favor HVPE over ammonothermal growth.
SAFC Hitech Well Positioned for High- Brightness LED Manufacturing Boom
2010-03-23
TMG Expansion at Bromborough UK Plant
SAFC Hitech, a business segment within SAFC, a division of the Sigma-Aldrich® Group today announced it plans to invest $2m (approximately 1.2m pounds Sterling) in expanding production of trimethylgallium (TMG) at its Bromborough, Wirral, UK manufacturing plant. The investment, which was supported by Wirral Council and The Mersey Partnership (TMP), who helped secure additional funding of 300,000 pounds from the Northwest Regional Development Agency (NWDA), is expected to enable SAFC Hitech to strengthen its position as a leading global supplier of TMG and satisfy the growing demand for the material in the production of high brightness LEDs (HBLEDs) for use in applications such as backlighting in flat panel television sets and energy efficient lighting.
Reducing energy consumption and extending energy efficiency are trends driving the global electronics industry to provide more energy- efficient products and systems. Demand in the lighting industry, for example, has seen improvement with the deployment of LEDs to replace currently ubiquitous systems – incandescent light bulbs, fluorescent lighting and its compact fluorescent lamp (CFL) derivative. As a result, the electronics market is at the start of a phase where mass manufacture of HBLEDs is occurring.
TMG has been manufactured at SAFC Hitech’s Bromborough facility for a number of years, primarily for supply to the global semiconductor industry. However, as TMG also fulfills the technical criteria for devices designed for the LED, laser, communication and other markets, the boom in demand for LEDs has led to the conclusion that expanding the plant – with its expertise and specific manufacturing knowledge for this process – was the ideal business solution to meet customer demand.
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www.compoundsemiconductor.net April/May 2010
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