news digest ♦ compound semiconductor
successful and well attended event with a great level of engagement.
The event will again be
held at the Cardiff City Hall and the organisers, JEMI UK Ltd expect more that 120 top level micro, nano and semiconductor professionals to attend the event. For more information on how to register for S2K or exhibit at the event, visit
www.semiconductor2k.com or contact the JEMI office on +44 131 650 7815 or jemi-
enquiries@see.ed.ac.uk
JEMI UK JEMI UK is the Joint Equipment and Materials Initiative;anon- profit organisation, representing more than 55 companies and form part of a network of organisations throughout Europe. JEMI UK was founded to promote the development of a strong infrastructure to support the growth of companies in the Semiconductor supplier industry, while ensuring that the interests of manufacturers and suppliers within the industry are properly represented. As part of the value added services offered to its members, JEMI organises technical visits to major semiconductor facilities across the UK and Europe to encourage member to member networking.
Further details about JEMI UK and how to become a member can be obtained from their
website at
www.jemiuk.com or by telephoning Claire Watson on +44 131 650 7815
Aixtron reports IAF epitaxy order
2010-03-26
IAF has placed an order for an AIX 2800G4 HT, 11x4-inch MOCVD tool with Aixtron.
Aixtron has announced the Fraunhofer Institute for Applied Solid State Physics (IAF) has placed an order for an AIX 2800G4 HT, 11x4- inch metal-organic chemical vapour deposition (MOCVD) tool.
IAF is planning to use the device to further its research into gallium nitride (GaN) on silicon carbide (SiC) compound semiconductors for
78
www.compoundsemiconductor.net April/May 2010
In particular, for use in the growth of AlGaN/ GaN-based high electron mobility transistor structures.
Dr Klaus Koehler, deputy department head of IAF’s epitaxy group, commented: “We have already made a good start on the development of GaN on SiC transistors on our existing Aixtron reactors. However, we now need to significantly expand our capabilities.”
The institute stated its belief that the use of GaN compound semiconductors will be commercially viable in the near future and this new order will go a long way to making this a reality.
Aixtron has its headquarters in Herzogenrath, Germany, but operates offices throughout Europe, the US, Australia and Asia.
Walsin Lihwa signs with KAAI for joint R&D of integrated light sources
2010-03-26
Walsin Lihwa Corporation announced today a cooperation agreement signed with the US-based KAAI for the two parties’ joint development of integrated light source packaging solutions.
The three-year program will develop a new generation of environmentally-sound photonics applications.
Walsin Lihwa also invites three founders of KAAI as science advisors - professors from Solid State Lighting & Display Center, University of California, Santa Barbara (UCSB), including the “father of blue light” Shuji Nakamura, as well as Dr. Steven Denbaars and Dr. James Speck who also attended the signing ceremony.
Ching Hu, President of Walsin Lihwa Micro- Optical-Mechanical-Electronic Group, and
use in high-power, high-frequency applications.
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191 |
Page 192 |
Page 193 |
Page 194 |
Page 195 |
Page 196 |
Page 197 |
Page 198 |
Page 199 |
Page 200 |
Page 201 |
Page 202 |
Page 203 |
Page 204 |
Page 205 |
Page 206 |
Page 207 |
Page 208 |
Page 209 |
Page 210 |
Page 211 |
Page 212 |
Page 213 |
Page 214 |
Page 215 |
Page 216 |
Page 217 |
Page 218 |
Page 219 |
Page 220 |
Page 221 |
Page 222 |
Page 223 |
Page 224 |
Page 225 |
Page 226 |
Page 227 |
Page 228 |
Page 229 |
Page 230 |
Page 231 |
Page 232 |
Page 233 |
Page 234 |
Page 235 |
Page 236 |
Page 237 |
Page 238 |
Page 239 |
Page 240 |
Page 241 |
Page 242 |
Page 243 |
Page 244 |
Page 245 |
Page 246 |
Page 247 |
Page 248 |
Page 249 |
Page 250 |
Page 251 |
Page 252 |
Page 253 |
Page 254 |
Page 255 |
Page 256 |
Page 257 |
Page 258 |
Page 259 |
Page 260 |
Page 261 |
Page 262 |
Page 263 |
Page 264 |
Page 265 |
Page 266 |
Page 267 |
Page 268 |
Page 269 |
Page 270 |
Page 271 |
Page 272