news digest ♦ compound semiconductor

with wavelengths of 300 nm to 350 nm. The company created an LED with the world’s highest output power in wavelengths by combining its own AIN template (high-quality AIN film growing on the sapphire substrate) technology, and the newly obtained ultraviolet LED epi growth technology from Palo Alto Research Center (PARC) and RIKEN. The currently available sample has achieved an optical output power of 1.4mW with 20mA in wavelengths of 320nm to 350nm.

Dowa Semiconductor Akita Co., Ltd., a subsidiary manufacturer of Dowa Electronics Materials, is creating prototypes and is striving to start mass production. It will seek to increase the output power while at the same time developing deep ultraviolet LED chips that will emit light with shorter wavelengths.

Dowa Electronics Materials has the ability to manufacture many types of GaAs products and has more than 20 years of experience in the red and infrared LED business. The company has also in recent years been rapidly enhancing the Iineup of nitride semiconductors. In the first stage, it has launched a nitride electronic device

(HEMT) epi for high-frequency waves used at next-generation mobile phone base stations, etc. and for power semiconductors. The deep ultraviolet LED chip is a nitride product in the second stage. With the introduction of this product Dowa aims to bolster the base of its semiconductor business.

BreconRidge Address`s Future Gallium- Nitride Based Programs & Technologies.

2010-03-18

BreconRidge Expands Monolithic Microwave Integrated Circuit (MMIC) Assembly Capabilities to Address Future Gallium-Nitride Based Programs and Technologies.

BreconRidge Corporation packaged and shipped over 90 Gallium-Nitride (GaN) modules

106 www.compoundsemiconductor.net April/May 2010

to the Canadian Space Agency (CSA) as part of its corporate strategy to extend its core capabilities in next generation Micro Electronic Modules. This delivery is the latest step in BreconRidge’s goal to become a key partner with the Aerospace and Defense industries. Prior milestones include collaborative design and manufacturing contributions to programs involving defense and aerospace radars, radio-astronomy systems and defense communication systems.

“Emerging technologies like Gallium-Nitride require an innovative approach in all aspects of product design and manufacturing.” commented John Pokinko, VP Engineering at BreconRidge. “We are aggressively pursuing all opportunities to further our expertise in applying these new technologies in advanced RF and microelectronic solutions. Successful completion of the CSA GaN packaging contract represents a key stepping stone in this strategy.”

Gallium-Nitride leads an emerging class of semiconductor technologies designed to tackle the RF challenges of next-generation cellular network base stations and satellite communications systems. Compact packaging and stringent linearity requirements challenge today’s designers to meet heat dissipation and bandwidth allocation objectives. GaN based electronics offers the potential to cost- effectively address these challenges.

The National Research Council’s Canadian Photonics Fabrication Centre (NRC-CPFC) was responsible for fabricating the GaN die used in this project at their world-class industrial grade facility. “Few companies in the Electronic Manufacturing Services sector have the capabilities to assemble and package Gallium- Nitride electronics.”, observed Cyril McKelvie, President at BreconRidge. “Being able to deliver these first modules is a reflection of our desire, skills and capabilities to address the emerging needs of the Aerospace and Defense sectors. Ultimately, our customers will benefit from our accumulated experience with Gallium- Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256  |  Page 257  |  Page 258  |  Page 259  |  Page 260  |  Page 261  |  Page 262  |  Page 263  |  Page 264  |  Page 265  |  Page 266  |  Page 267  |  Page 268  |  Page 269  |  Page 270  |  Page 271  |  Page 272