compound semiconductor ♦ news digest

Richard Craig, CEO of KAAI, presided over the signing today. KAAI is world renowned for demonstrating the first continuous wave green Gallium Nitride lasers.

According to President Ching Hu, the advanced blue and green laser technology at KAAI will be critical to Walsin Lihwa¡¦s integrated light source business development, and the R&D cooperation between the companies is expected to effectively share resources and talents to generate an amazing synergy.

In 2000, Walsin Lihwa commenced micro- electromechanical system (MEMS) development. In the past few years, the company has been dedicating itself to MEMS applications for integrated light sources with near 200 patents secured.

Walsin Lihwa strives for the R&D of integrated light source packaging and wafer level packaging, providing total solutions to optical, mechanical and electronic applications. The MEMS team has been effectively attracting local and overseas talents enabling R&D independence in order to become a leading provider of miniaturized module.

Established in 1966, Walsin Lihwa is committed to the manufacture and R&D of copper cables and wires, power cables and wires, and specialty steel products.

The company -- a leader of power cable and wires as well as specialty steel products in the Greater China market -- has successfully expanded into the fields of MEMS and environmentally-sound photonics applications.

University of Maryland claim breakthrough material advance

2010-03-26

Revolutionary solution for semiconductor and nano materials published in Science

University of Maryland researchers have

created a completely new way to produce high quality semiconductor materials critical for advanced microelectronics and nanotechnology. Published in the March 26 issue of Science, their research is a fundamental step forward in nanomaterials science that could lead to significant advances in computer chips, photovoltaic cells, biomarkers and other applications, according to authors and to experts not affiliated with the study.

“This is a major, major advance that shows it is possible to do something that was impossible to do before,” said Massachusetts Institute of Technology Associate Professor Francesco Stellacci, whose own work focuses on discovery of new properties in nanoscale materials and the development of new nanofabrication schemes. “This research actually shows that it’s possible at the nanoscale for two materials to happily coexist at their interface, two materials that would not coexist otherwise,” explained Stellacci, who was not involved in the study.

Led by Min Ouyang, an assistant professor in the department of physics and the Maryland NanoCenter, the University of Maryland team has created a process that uses chemical thermodynamics to produce, in solution, a broad range of different combination materials, each with a shell of structurally perfect mono- crystal semiconductor around a metal core. Ouyang and fellow researchers Jiatao Zhang, Yun Tang and Kwan Lee, say their method offers a host of benefits over the existing process, known as epitaxy, used to create single crystal semiconductors and related devices. The biggest advantage of their non- epitaxial process may be that it avoids two key constraints of epitaxy -- a limit on deposition semiconductor layer thickness and a rigid requirement for “lattice matching.”

The constraints of the epitaxial method restrict the materials that can be formed with it. For example, authors Ouyang, Zhang, Tang and Lee note that attempts to use epitaxy

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