news digest ♦ compound semiconductor

motor control, home appliances, PV inverters, EV/HEV and white goods may consume less energy; to higher power in which train traction, wind turbines and energy T&D are expecting new solutions to reduce conversion losses.

This battle for an efficient world starts at the heart of every system: the power devices. These devices today are mainly based on silicon technology. Silicon diodes and silicon transistors (MOSFET, IGBT, Thyristors…) are the key components and are constantly improving their performance, reliability, life- time and efficiency. However, year-to-year improvements are slowing as they approach maximum theoretical specs.

New materials have emerged in recent years and some may be able to displace existing silicon devices with enhanced characteristics, less loss, higher operation temperature, longer life-time and greater robustness to cycles. SiC was the first technology commercially introduced in the early 2000’s and GaN is now coming to market as well.

This 2-day seminar will begin with a review the main market metrics from devices to applications and current state of the art of the Silicon-based power electronics. It will then explore the capabilities of GaN and SiC to disrupt that equilibrium and will highlight the recent developments in a selection of applications.

Register online at the website: http://www.

the-infoshop.com/conference/power- electronics-japan10/

Natcore Technology Enlarges Solar Science Portfolio

2010-03-31

Vanguard’s technology to complement Natcore’s

One month after announcing the formation of a joint venture in China to produce equipment

72 www.compoundsemiconductor.net April/May 2010

and materials for use in making solar cells, Natcore Technology Inc. has executed a letter of intent to purchase Vanguard Solar, Inc., a private firm controlling key intellectual property in the field of solar energy. The closing of the transaction is subject to the completion of due diligence and mutually agreeable legal documentation.

Vanguard has focused on the development of a flexible, thin-film photovoltaic material potentially capable of silicon solar cell-like efficiency at one-tenth the manufacturing cost and one-twentieth the capital investment.

Vanguard employs a proprietary chemical bath process similar to Natcore’s liquid phase deposition (LPD) technology, although Vanguard is growing II-VI compound semiconductor thin films on carbon nanotubes at room temperature and ambient pressure, while Natcore has thus far concentrated on producing solar cells by growing silicon dioxide films on silicon substrates.

The first-generation products from Vanguard’s method could produce 15%-16% efficiencies at module costs of 60 cents to 70 cents per watt. It is anticipated that second-generation technology could achieve 20% efficiencies at even lower costs per watt. The investment for production facilities is projected as low as $10 million to $15 million per 100-megawatt to 150-megawatt production capability, as compared with current costs of as much as $250 million for standard solar-cell production facilities. Vanguard’s production equipment would be designed for insertion into an existing roll-to-roll film-coating line of the sort that has been displaced by the emergence of digital photography. All production materials are widely available and dramatically cheaper than silicon and other thin film systems. If successfully developed, the process would enable a very cost-efficient production capability in large- scale facilities.

Two of Vanguard’s shareholders are Professor Andrew Barron and Dr. Dennis Flood, both of Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256  |  Page 257  |  Page 258  |  Page 259  |  Page 260  |  Page 261  |  Page 262  |  Page 263  |  Page 264  |  Page 265  |  Page 266  |  Page 267  |  Page 268  |  Page 269  |  Page 270  |  Page 271  |  Page 272