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Leti shows off new CMOS laser

Letihas announced that it has demonstrated a fully CMOS-compatible laser source coupled to a silicon waveguide, a major milestone toward the WADIMOS project’s goal of fabricating silicon photonics circuits in CMOS foundries.

WADIMOS is an EU-funded research project to demonstrate a photonic interconnect layer on CMOS. Leti’s partners in the project, which is coordinated by Imec, include STMicroelectronics, MAPPER Lithography, the Lyon Institute of Nanotechnology (ILN) and the University of Trento.

Working with a circuit design from INL and Imec, Leti completed the specific process studies for the laser source to adapt and modify standard III-V materials process steps that would comply with a CMOS environment. Leti replaced gold-based metal contacts with a Ti/TiN/AlCu metal stack. WADIMOS partners at SPIE Photonics Europe 2010 in Brussels will present the results, April 12-16.

The enormous computing power of multi- processor systems and manufacturing tools being considered will require data transfer rates of more than 100Terabit/s.

These data rates may be needed on-chip, e.g. in multi-core processors, which are expected to require total on-chip data rates of up to 100TB/s by 2015, or off-chip, e.g. in short-distance data interconnects, requiring up to 100TB/s over a distance of 10-100 meters. Optical interconnects are the only viable technology for transmitting these amounts of data.

Besides a huge data rate, optical interconnects also allow for additional flexibility through the use of wavelength division multiplexing. This feature may be help realize more intelligent interconnect systems such as the optical network-on-chip system that the WADIMOS project also is studying.

WADIMOS, which is an abbreviation for Wavelength Division Multiplexed Photonic Layer on CMOS, will build a complex photonic interconnect layer incorporating multi-channel microsources, microdetectors and different advanced wavelength routing functions directly integrated with electronic driver circuits. It also will demonstrate the application of the electro-photonic ICs in an on-chip optical network and a terabit optical datalink.

GaN market 'poised for growth'

GaN products could soon see a growing demand for use in low-power applications. The market for gallium nitride (GaN) products could be set to take off in the months ahead due to an increasing demand for chips produced using this compound semiconductor.

With applications in mobile handsets, wireless communications, servers and notebooks, GaN-based chips are likely to see a significant boost in demand due to the low-power benefits they offer, Chip Design Mag reported in a recent blog by Ann Mutschler.

"The benefits of GaN in low power are density, efficiency and cost. Ultimately, it gives you a better trade-off for all three of those compared to silicon and the key is to make it below a certain cost threshold," commented Tim McDonald, vice-president of the emerging technologies group at International Rectifier.

12 www.compoundsemiconductor.net April/May 2010

Elsewhere, International Rectifier announced it has opened a new manufacturing facility in San Jose where it will be focusing on the production of GaN and silicon materials for use in space, aerospace, military and heavy- duty industrial applications. Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256  |  Page 257  |  Page 258  |  Page 259  |  Page 260  |  Page 261  |  Page 262  |  Page 263  |  Page 264  |  Page 265  |  Page 266  |  Page 267  |  Page 268  |  Page 269  |  Page 270  |  Page 271  |  Page 272
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