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to achieve the kind of hybrid core-shell nanostructures they demonstrate in their article have been unsuccessful.

“Our process should allow creation of materials that yield highly integrated multi-functional microelectronic components; better, more efficient materials for photovoltaic cells; and new biomarkers,” said Ouyang, who noted his team is in the process of applying for a patent. “We envision for example that we can use this method to create new types of photovoltaic cells that are ten times more efficient in converting sunlight to electricity than current cells.”

“Our method doesn’t require a clean room facility and the materials don’t have to be formed in a vacuum the ways those made by conventional epitaxy do,” Ouyang said. “Thus it also would be much simpler and cheaper for companies to mass produce materials with our process.”

Epitaxy is one of the cornerstones of contemporary semiconductor industry and nanotechnology, and has been considered the most affordable method of high quality crystal growth for many semiconductor materials including silicon-germanium, gallium nitride, gallium arsenide, indium phosphide and graphene.

The new method also can be used to design and fabricate artificial quantum structures that help scientists understand and manipulate the basic physics of quantum information processing at the nanoscale, said Ouyang, noting that he and his team have a separate paper on the quantum science applications of this method that they expect to be published in the near future.

This work was supported by the Office of Naval Research, the National Science Foundation (NSF), and Beckman Foundation. Facility support was from Maryland Nanocentre and its Nanoscale Imaging, Spectroscopy, and Properties Laboratory, which is supported

80 www.compoundsemiconductor.net April/May 2010

in part by the NSF as a Materials Research Science and Engineering Centres shared experiment facility.

“Nonepitaxial Growth of Hybrid Core-Shell Nanostructures with Large Lattice Mismatches,” Jiatao Zhang, Yun Tang, Kwan Lee, Min Ouyang, Science, March 26, 2010.

LCD TVs to Exceed 180 Million Units in 2010

2010-03-26

LED-Backlit Models to See Major Growth, Reaching 20% of LCD TVs This Year

2009 was a robust year for the overall flat panel TV market, with total units rising worldwide by more than 32%, very similar to 2008 growth rates. In markets such as Japan and China, growth in 2009 was better than in 2008, despite the recession. Given the strong result in 2009 and the positive influence of new technology introductions such as 3D and LED, DisplaySearch has increased its worldwide TV market forecast for 2010 by more than 10 million units to 228 million units.

“The rapid transition to flat panel technologies in emerging markets and the robust level of growth even in mature markets has led us to improve our outlook for 2010,” observed Hisakazu Torii, Vice President of TV Market Research for DisplaySearch. “This is especially true for LCD TVs, which are now projected to exceed 180 million units in 2010, a 24% increase over 2009. This is helped by the introduction of new technologies like 3D, as well as the expansion of newer features like LED backlights and internet connectivity.”

Price erosion was the major factor contributing to the excellent growth in 2009, with LCD TV average prices falling 24% from 2008, much more than any preceding year. In 2010, volume-weighted average prices are only projected to fall by 5% for LCD TVs and 10% for plasma TVs. The reasons for the more modest decline are renewed growth in larger Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256  |  Page 257  |  Page 258  |  Page 259  |  Page 260  |  Page 261  |  Page 262  |  Page 263  |  Page 264  |  Page 265  |  Page 266  |  Page 267  |  Page 268  |  Page 269  |  Page 270  |  Page 271  |  Page 272