news digest ♦ compound semiconductor
‘Earlier this week EPC introduced a family of enhancement-mode GaN transistors ranging from 40V and 33ADC to 200V and 12ADC. These products offer performance unachievable in silicon yet, due to the fact they are produced in a standard silicon foundry, can be offered at silicon MOSFET level pricing. We are pleased with this opportunity to discuss the implications of this disruptive product with the participants of this conference,’ said Dr. Lidow.
The keynote speech is accompanied by a paper of the same title which will be available in the IEEE Xplore digital library, or at:
www.epc-co.com/ToolsandDesignSupport/ ProductTraining.aspx
Riber announces Compound 21 unit sale
2010-03-16
MBE unit sold to German compound semiconductor research lab.
Molecular beam epitaxy (MBE) systems developer Riber has announced the sale of a Compound 21 MBE unit to a German firm.
Innovation of High-Performance Microelectronics Laboratory (IHP Labs) - based in Frankfurt - is a European research and innovation centre and has purchased the unit for the development of graphene-based products.
Graphene is a monofilament of carbon molecules, densely packed in a honeycomb lattice. The name is derived from graphite, as it is made from many layers of graphene sandwiched together.
The material has uses in the development of next-generation ultra-fast transistors and, as such, IHP Labs aims to use the Compound 21 system to help in this research.
As a result, the organisation asked for the MBE unit to be fitted with a gas injector.
Riber noted that this deal will help strengthen
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www.compoundsemiconductor.net April/May 2010
its position in the German market and highlights its expertise in providing equipment for cutting edge compound semiconductor research.
Innovative Technology for the Replacement of Silicon Solar Cells
2010-03-16
XsunX Moves Closer to Commercializing Its Innovative Technology for the Replacement of Silicon Solar Cells
XsunX Inc, the developer of advanced, thin-film photovoltaic (TFPV) solar cell technologies and manufacturing processes, today announced the company has reached a significant milestone in its development process: the completion of a co-evaporation processing chamber design that combines several thermal evaporation techniques in one unified process to produce the CIGS (Copper Indium Gallium diSelenide) solar cell’s absorber layer.
“This development is crucial to both the equipment and process technology side of our efforts,” said Tom Djokovich, CEO of XsunX, Inc. “The completion of this chamber converges several operations that we have been developing separately, allowing all of the processes necessary to produce the CIGS layer for our cross-industry technology to work in unison. This development increases the rate with which we can develop this new technology towards our initial baseline commercialization goals. This is a fundamental next step in our plan to commercialize our hybrid CIGS manufacturing process, and deliver a potential replacement solution for the use of silicon.”
The hybrid cross-industry system XsunX is developing is an integrated delivery method that uses proven material handling and automation technologies from the Hard Disk equipment (HD) industry and adapts them to small-area thin-film photovoltaic (TFPV) co-evaporation processes to configure the absorber layer, or solar power conversion portion of the cell, to produce low cost solar
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