news digest ♦ LEDs
and ultraviolet (UV) LEDs. Ja-Soon Jang, Chief Director, LIFTRC, and a professor, at the Department of Electronic Engineering, at Yeungnam University comments, “Veeco’s K465i enables us to conduct research and development of next generation LED technology on a fully-automated, low cost of ownership platform. Veeco’s industry-leading position, localised support and technical expertise will help us achieve our goal of collaborating with local and worldwide LED manufacturers.” William J. Miller, Veeco’s Executive Vice President, Process Equipment, adds, “We are very pleased that LED-IT Fusion Technology Research Centre, a top research organisation, recognises the benefits of the TurboDisc K465i MOCVD System. We look forward to supporting LIFTRC and their partners and believe Korea will continue to drive the advancement of LED technology.”
reactors installed during the 2010-2011 boom and drive a last small equipment cycle in the second half of the decade. By then, GaN power will also represent a substantial upside for reactor manufacturers.
Overall MBE use is heavily driven by R&D systems, capturing over 50% of the total market.
In the future, Yole expects the MBE market will be essentially driven by the continuous growth in the cell phone and wireless applications that are making heavy use of GaAs based RF components. Emerging applications like smart grid and the trend toward increasing connectivity and “intelligence” incorporated in many consumer products will provide further opportunities.
Will we recover from the III-V
decline? Yes, says Yole Développement; the compound semiconductor III-V market should see a $6.1 billion opportunity by 2020
MOCVD and MBE are the main epitaxial methods used to manufacture III-V based devices .
According to Yole Développement, the combined revenue opportunity for MBE and MOCVD is estimated to be around $6.1 billion for the 2012-2020 period.
However, alternative technologies such as silicon CMOS, LDMOS, SoS, and HR SOI, represent a potential threat and could capture shares of the GaAs RF market and reduce the opportunity for MBE.
What’s more, MOCVD is making progress in HEMT manufacturing. HCPV, however, could provide a small potential upside for MBE makers.
The MOCVD and MBE equipment markets are duopolies but many emerging players could change the landscape.
Aixtron and Veeco are leading in MOCVD and together represented 96% of the market in 2011. MOCVD production systems are complex. Design and optimisation require expertise in multiple fields including flow dynamics, thermodynamics, chemistry, mechanical and electrical engineering.
Applied Materials is also working with imec to create the ideal MOCVD reactor for 8-inch GaN-on-Silicon for use in LEDs and power devices.
Technological barriers to entry are fairly high. More than fifteen emerging players have been identified but so far have been struggling to capture any sizeable share of the market. But the pressure is mounting and established MOCVD makers will need to maintain that technology gap to keep emerging competitors at bay.
LED is by far the single largest application for MOCVD. In 2010 and 2011, the MOCVD market experienced the largest investment cycle in its history driven by a combination of the demand for LED backlit LCD TVs and subsidies by the Chinese central and local governments. Expected demands for the general lighting market was also a big factor.
This has put the market into a significant overcapacity situation that could take 12-18 months to recover from. The next investment cycle, driven by lighting applications and expected to start in 2013, will be more limited than the previous cycle due to improvements in equipment throughput and yields.
Following this cycle, further Cost of Ownership (COO) improvements offered by the next generation of MOCVD reactors should justify the replacement of 2-generation-old
74
www.compoundsemiconductor.net April/May 2012 The main problem is total cost of ownership. Established
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175