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Before joining Intense, Sauter served as Key Account Manager for South Europe for Edmund Optics. Prior to that, she held the position of Sales Manager, Italy, for Laser 2000, a Munich- based distributor of photonics products. She has also worked as Global Sales & Marketing Director for laser systems manufacturer Toptica Photonics.
Beate Sauter adds, “I am very excited about joining Intense. The company’s innovative products and knowledgeable staff have already developed a superior reputation in the European photonics market. I’m looking forward to adding my own brand of dynamism, experience, and enthusiasm to the team.”
First fully integrated silicon
photonics transmitter CEA-Leti and III-V Lab have developed the device which incorporates a hybrid III-V compound semiconductor tuneable laser on silicon
CEA-Leti and III-V lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-Leti, have demonstrated an integrated tuneable transmitter on silicon.
The researchers say this is the first time a tuneable laser source has been integrated on silicon, which represents a key milestone towards fully integrated transceivers.
The transmitter incorporates a hybrid III-V/Si laser-fabricated by direct bonding, which exhibits 9 nm wavelength tunability and a silicon Mach-Zehnder modulator with high extinction ratio (up to 10 dB), leading to an excellent bit-error-rate performance at 10 Gb/s. The results were obtained in the frame of the European funded project HELIOS.
Other contributors were Ghent University-Imec for the design of the laser and the University of Surrey which designed the modulator.
CEA-Leti and III-V lab also demonstrated single wavelength tuneable lasers, with 21 mA threshold at 20°C, 45 nm tuning range and side mode suppression ratio larger than 40 dB over the tuning range.
Silicon photonics is a very powerful technology, and CEA-Leti and III-V lab have now made a significant breakthrough in its development by integrating on the same chip complex devices such as a fully integrated transmitter working above 10Gb/s or a tuneable single wavelength laser.
Silicon photonics has the promise of bringing the large scale manufacturing of CMOS to photonic devices that are still expensive due to a lack of ubiquitous technology. One big obstacle to silicon photonics is the lack of optical sources on silicon, the base material on CMOS.
“We can overcome this problem by bonding III-V material, necessary for active light sources, onto a silicon wafer and then co-processing the two, thus accomplishing two things at
once,” explains Martin Zirngibl, Bell Labs Physical Technologies Research leader. “Traditional CMOS processing is still used in the process, while at the same time we now can integrate active light sources directly onto silicon.”
Based on the heterogeneous integration process developed by the CEA-Leti and III-V lab, III-V materials such as InP can be integrated onto silicon wafers. The fabrication process starts on 200 mm Silicon on Insulator (SOI) wafers where the silicon waveguides and modulators are fabricated on CEA-Leti 200 mm CMOS pilot line.
“We are proud to jointly present with III-V lab the results of the integrated silicon photonics transmitter and the tuneable laser,” said Laurent Fulbert, Photonics Program Manager at the CEA-Leti France. “The ability to integrate a tuneable laser, a modulator and passive waveguides on silicon paves the way of further developments on integrated transceivers that can address several application needs in metropolitan and access networks, servers, data centres, high performance computers as well as optical interconnects at rack-level and board-level. We are pleased to bring our contribution to these state-of-the-art results which can truly revolutionize optical communications.”
Results of this latest development will be presented during the Optical Fibre Communication conference 2012 in Los Angeles (USA) took place between March 4th and 8th, 2012. CEA-Leti will also showcase its products at booth #718 at the conference.
First demonstration of 40G CFP interoperability
achieving expanded reach Involving III-V based DFB lasers and transceivers, Opnext will show the ability to migrate to a 40G transceiver solution in a smaller package which consumes lower power
Opnext says it will host the industry’s first interoperability demonstration between a 1550nm wavelength CFP (cordless fixed part) MSA compliant module and a 1310nm wavelength 300 pin MSA compliant module at 40Gb/s.
The demonstration will be conducted during the Optical Fibre Communication Conference and Exhibition/National Fibre Optic Engineers Conference (OFC/NFOEC 2012) was held between March 6th and 8th in Los Angeles. It showed how technology paths for 40G transceiver solutions can support extended reach and lead to the development of smaller, pluggable transceiver technology with single mode fibre in a 1310nm wavelength.
This technology demonstration, using Opnext’s EA-DFB laser, will show how the module achieves 1310nm wavelength performance while interoperating with a currently deployed 1550nm wavelength-based optical transceiver.
Opnext will also show how migration from a 1550nm wavelength to a 1310nm wavelength can be achieved in a smaller form factor such as a CFP4 or QSFP+ without affecting
April/May 2012
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