RF Electronics ♦ news digest
the firm’s ongoing commitment to providing China-based customers with operational scale, technological innovation and an industry-leading cost structure.
RFMD opened its first manufacturing facility in Beijing in 2002 in support of local China-based manufacturers and international manufacturers with operations in China.
The company extended its commitment to China in 2007 with the opening of its Shanghai Design Centre and a major expansion of its Beijing facility. Today, RFMD offers one of the industry’s most complete end-to-end sources for design, manufacturing, field applications engineering and sales support,. RFMD has approximately 2,000 employees located in China supporting hundreds of customers and baseband providers.
Bob Bruggeworth, president and CEO of RFMD, comments, “This considerable milestone exemplifies RFMD’s long- standing commitment to our customers based in China. As we commemorate our tenth year of operations in Greater China, we anticipate strong growth with China-based customers, driven by continued innovation in 2G components and the industry’s most innovative and most reliable RF product portfolio for the rapidly growing 3G and TD-SCDMA/TD-LTE smartphone markets.”
efficiency GaN device.
TriQuint’s says its R&D programs set new standards while also enabling a wide selection of design-ready GaN products for commercial and defence applications.
The firm’s products include a full range of FETs, MMICs, packaged transistors, high-power RF switches, and it also provides foundry services. TriQuint develops and manufactures standard and custom GaN, GaAs, SAW and BAW products.
TriQuint’s Debbie Burke
awarded for HR leadership Burke was recognised for supporting the company’s growth through compelling and innovative Human Resource programs
RF solutions supplier, TriQuint Semiconductor, has announced that Debbie Burke, Human Resources Vice President, was named ‘HR Leader of the Year’.
Burke was awarded at the Portland Business Journal’s second annual HR Leadership Awards ceremony. She received the honour in the large company category.
TriQuint to update us on its
GaN R&D achievements The firm will describe its developments on E/D mode III-nitride devices and integrated gallium nitride X-band amplifiers
Scientists from TriQuint will present papers highlighting GaN advancements at the 2012 GOMACTech conference.
TriQuint says that Burke is known throughout the company for her commitment to developing individual employees and effective managers. As an example, she customises Leadership and Management Development forums to align with corporate strategies; these forums develop skills and share knowledge to reach organisational objectives.
TriQuint says that besides her focus on developing leaders, the firm’s employee headcount growth and industry-leading retention of valuable talent has been expertly managed through Burke’s leadership.
The convention is tookplace between March 19th and March 22nd in Las Vegas. Presentations will detail state-of-the-art E/D Mode InAlN/GaN devices that deliver record high-frequency performance in DARPA-funded programs.
Integrated GaN X-band amplifiers will also be explored. The firm’s new GaN X-band paper details how TriQuint researchers have integrated RF matching and bias circuits in a 66 W high-
“Debbie is a business partner with a passion for excellence in support of our customers and employees. She leads with enthusiasm, is both encouraging and demanding in setting high standards, and is trusted by all those she works with because she cares as much for the people as she does for the business,” says Ralph Quinsey, TriQuint President and Chief Executive Officer.
Burke has embraced the “Lean” concept of continuous improvement to optimise the quality and efficiency of the HR department. To support TriQuint’s growth initiatives, she
April/May 2012
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