news digest ♦ Telecoms
to its selection as a prime contractor in the Microscale Power Conversion (MPC) program that is developing ultra-fast, high power DC-DC switch modulator technology for advanced integrated RF amplifiers.
TriQuint’s role in MPC was recognised by Compound Semiconductor magazine on March 12 with a 2012 CS Industry Award.
“Creative partnerships through Cooperative Research and Development Agreements encourage outside businesses and university organisations to share in the discovery of and investment in technologies. In this case, ARL is leveraging industrial fabrication capabilities allowing ARL to maximize its return on investment,” points out John Miller, Army Research Laboratory Director. “These advanced IC processes, coupled with ARL’s design expertise, could lead to innovations and advancements in both military and consumer applications in communications, radar and electronic warfare.”
“TriQuint’s GaN research leads the industry. This new CRADA is another example of ways that our work in one program benefits other DoD agencies and service branches. We will provide access to our extensive development capabilities and the ARL will provide designs and test circuits in support of their advanced programs,” adds James L. Klein, TriQuint Vice President and General Manager for Defence Products and Foundry Services.
TriQuint’s new agreement with the ARL is designed to stimulate high performance monolithic microwave integrated circuit (MMIC) development. The ARL’s design and testing capabilities will be leveraged with TriQuint’s MMIC fabrication, testing and packaging expertise. Both TriQuint and ARL researchers will work towards identifying circuits of mutual interest that have the potential to advance state-of-the-art design programs.
TriQuint has been a pioneer in GaN development and research since 1999. The firm is involved in a number of GaN process and manufacturing technology programs for DARPA, the US Air Force, Army and Naval laboratories including the Defence Production Act Title III manufacturing enhancement program. TriQuint has also led two other DARPA programs that were part of the Wide Bandgap Semiconductor (WBGS) RF research initiative.
RFCA3302
RFMD says the high gain, high linearity, and low distortion from 40MHz to 1008MHz makes this device ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations. It is offered in a small SOT-89 package and is RoHS compliant.
Applications include broadband 75Ω gain block, CATV distribution amplifiers, pre-amplifiers for CATV multi-dwelling units and drop amplifiers.
Features High gain: 21dB High linearity and low distortion 40dBm IP3 -65dBc CSO -83dBc CTB
The product is currently available in production quantities, with pricing beginning at $1.51 each for 1000 pieces.
RFMD reveals new InGaP amplifier
The new RFCA3302 linear CATV 40MHz to 1008MHz gallium arsenide-based amplifier is ideally suited to broadband cable applications
RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5V supply without the need for an external dropping resistor.
Enhancing InP HBTs with transferred substrate technology
Optimising high frequency and power performance, the 3” wafer-level process enables lithographic access to both the front- and backside of an Indium phosphide HBT. The vital step in gaining access to both sides is to completely remove the supporting substrate
Research on high-speed transistors is driven by applications for imaging and wide band communications.
Recent technical advances of InP-based transistors with several hundred gigahertz (GHz) operating frequencies, together with their outstanding material properties qualify them as key components in such systems.
106
www.compoundsemiconductor.net April/May 2012
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