Telecoms ♦ news digest
Internally, the component knows how to generate its layout, its input/output connections with other components, its internal circuit representations, and so on. This ensures a separation between the formal specification of a component or circuit and different representations that can be derived. For example, a mask layout in GDSII, a 2D or 3Dmodel or a circuit model.
Components can be defined to accept outside technology information provided by the fab, effectively allowing a design that could be fabricated in different locations. Design kits for imec’s silicon photonics technologies are made available through ePIXfab, a European foundry service for Silicon Photonics prototyping and through imec directly for customised photonic IC development.
The developers say the IPKISS design approach is powerful and flexible, while at the same time very accurate, resulting in a productive design cycle with little margin for copy-and-paste errors. This contrasts with a design workflow which is static and cannot be influenced by the user, or where the user is limited to the functionality provided in a graphical user interface. Users of IPKISS will have access to a powerful and flexible software platform that can catalyze their research with a relatively small incremental effort.
The IPKISS framework is available under different open source licenses.
For the community, a GPLv2-licensed code base of IPKISS will allow access to the framework for free. The objective of this license scheme is to encourage people into developing the IPKISS framework, so a thriving community can evolve around the framework.
For the developer, a custom license with an annual fee allows the licensee to develop plug-ins and add-ons for distribution.
There is also a custom commercial license which is targeted as software developers who wish to incorporate IPKISS into a product, and bundle a modified version of the code base with their own additions. This license and its cost would be tailored to each individual case.
The platform was launched at SPIE Photonics Europe 2012— Exhibitor Product Demonstrations on Tuesday April 17th, 1:30 p.m. More about the product can be found at the conference at the Innovation Village and European Network, space 24: ePIXfab at the IPKISS booth.
GigOptix reveals new silicon germanium amplifier for 40G
networks The linear Transimpedance Amplifier (TIA) incorporates two balanced linear TIAs integrated on a single silicon germanium die
GigOptix is making available samples of its new generation GX3122B. Designed for use in 40Gb/s DWDM coherent optical receivers, the device consists of two balanced linear
TIAs integrated on a single silicon germanium die. The device amplifies weak signals received from photodiodes to drive the analogue to digital converters and digital signal processor in a coherent optical system. The GX3122B is designed to provide excellent signal fidelity by having total harmonic distortion of less than 5% over 30dB of dynamic range. It can handle the high AC and DC currents seen in coherent receivers. GigOptix says the highly integrated solution with dual channel TIAs reduce system complexity and cost and has an increased differential gain of 5KΩ. What’s more, the low power consumption device comes in automatic or manual gain control options and has a peak detection function and an input power monitor. “We are very excited to provide an innovative solution for the 40G coherent market which according to Ovum market research is one of fastest growing segments in the 40G and 100G optical networking market,” says Raluca Dinu, Vice President and General Manager of the Optics Product Line at GigOptix. “The increased demand for bandwidth throughout the network driven by the near ubiquitous use of smartphones and the migration of applications from the desktop into the cloud is continuing to force network operators to upgrade their link capacity to handle the increasing traffic. The GX3122B addresses this space uniquely since it was designed in silicon germanium and therefore provides a superior solution in terms of both performance and price. We expect the GX3122B to be a significant contributor to our future growth in the 40G coherent optical market.” According to Ovum’s latest report on 40G and 100G optical components, the 40G coherent optical system is expected to grow with a compound annual growth rate of 64% until 2016.
TriQuint and U.S. army to
develop GaN devices The firm’s gallium nitride technology in DARPA programs has led to a new beneficial joint venture with the ARL
TriQuint Semiconductor has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high- frequency and mixed signal integrated circuits (ICs) based on TriQuint’s GaN technology.
The CRADA is designed to accelerate new programs supporting communications, radar, electronic warfare and similar applications.
The CRADA will give Army researchers dedicated access to TriQuint’s development, fabrication and packaging expertise. Researchers from both TriQuint and the ARL will benefit from the new co-development environment. Circuits created as part of the initiative are expected to be based on TriQuint’s new E/D (enhancement-depletion mode) GaN technology.
This GaN process has been utilised in Defence Advanced Research Projects Agency (DARPA) initiatives, including the Nitride Electronic NeXt-Generation (NEXT) program that TriQuint now leads. Through NEXT, TriQuint continues to establish benchmark performance standards for mixed-signal (digital and RF) devices. TriQuint GaN achievements also led
April/May 2012
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