news digest ♦ RF Electronics in this power class.
XPT1015 module
Nitronex says the XPT1015 leverages its existing 28V NRF1 process platform which has been used to ship more than 650,000 production devices. This includes more than 50,000 MMICs, since volume shipments began in 2009. One hundred XPT1015 devices from four wafers were subjected to a 15:1 VSWR at all phase angles at a 90°C base plate temperature. During VSWR testing, all devices were operated in a saturated average power condition, being driven by a 4000 carrier 200MHz wideband signal with a 19.5dB peak-to-average ratio. These devices all survived and had only about a 0.2dB average change in saturated output power.
Ray Crampton, VP of Engineering, says, “Historically there have been markets which Nitronex could not address because our products did not meet their stringent robustness requirements. We made reliability, robustness, and ruggedness a priority over the last several quarters. Our new XPT1015 is our first 28V product explicitly designed for severe operating environments. In addition, our recently announced 48V platform was also designed from the ground up to meet very severe environmental requirements.” “We are excited to have expanded our addressable markets and applications by offering this new rugged technology capability.” Nitronex says its patented SIGANTIC GaN-on-Silicon process is the only production qualified GaN process using an industry standard 4” silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, CATV, RADAR, commercial wireless, satellite communications and point to point microwave. Nitronex is currently providing prototypes to select customers and the XPT1015 is expected to be commercially available later this year.
Jerry D. Neal
Neal has had a distinguished career in the communications technology industry, including the co-founding of RFMD and his role in the subsequent growth of the company. As a co- founder of RFMD, Jerry Neal was responsible for securing the Company’s initial venture capital investment, as well as multiple licensing deals, branding, and mergers and acquisitions. He was also primarily responsible for many of the Company’s corporate relationships, including TRW (now Northrop Grumman), Nokia, IBM, TowerJazz, and others.
Reflecting on his twenty-one year career at RFMD, Jerry Neal comments, “RFMD is both a pioneer and a global leader in communications technologies, and it is an honour to have played a major role in starting and building the Company. With my retirement from RFMD, I look forward to pursuing other passions in my life including entrepreneurial, advisory, and charitable endeavours. I sincerely wish the greatest success to my many friends and colleagues at RFMD.”
Bob Bruggeworth, president and chief executive officer of RFMD, says, “RFMD has benefited tremendously from Jerry Neal’s contributions and expertise. I personally have enjoyed working with Jerry and have valued his counsel and the strategic relationships he has built in the industry. All of RFMD wishes Jerry Neal much success as he focuses his time and energy on other ventures.”
Jerry Neal is active in business, education, and charitable organisations and has served on the Boards of Directors of several semiconductor companies.
RFMD co-founder Jerry D. Neal retires
Neal is now looking forward to pursuing other opportunities including entrepreneurial, advisory, and charitable endeavours
Jerry Neal, co-founder and executive vice president of marketing, is retiring from RFMD, effective May 31, 2012.
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www.compoundsemiconductor.net April/May 2012
Skyworks diversifies to stay top dog in GaAs device manufacturing
Branching out with smartphone customers, products, technology and market applications have enabled Skyworks to perform way over the odds, along with WIN Semiconductors
Although the GaAs device market growth plummeted in the second half of 2011, with overall revenue increasing by only
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