CS Industry Awards 2012 Metrology, Test and Measurement Award Award
Gallium Nitride Microscale Power Conversion Research & Development
TriQuint Semiconductor is an established gallium nitride (GaN) high frequency / high power research, development and product leader with an expanding (DC-18 GHz) packaged MMIC, FET, switch and integrated assembly portfolio.
TriQuint’s award-winning research and development activities are now supporting the creation of ultra-fast (1 nanosecond slew rate), high power (up to 500V) DC-DC switch modulators. This initiative is being
undertaken as part of the Microscale Power
Conversion (MPC) program funded by the US government through its Defense Advanced Research Projects Agency (DARPA). The ultimate goal is to create an integrated amplifier with 75% power added efficiency (PAE). TriQuint’s GaN switch plays an essential role since its ability to deliver highly-efficient, modulated power to the amplifier will be key to achieving performance required by the most demanding and rigorous conditions. MPC researchers are utilizing TriQuint’s E/D (enhancement-depletion)-mode GaN process as a foundation for their innovative development activities.
This 2012 CS Industry Award follows TriQuint’s ground-breaking work in mixed- signal (digital and analog RF) devices,
high power RF switching, and a wide range of GaN-based IC product innovations including multi-chip modules (MCM) and integrated GaN assemblies.
TriQuint’s Defense Products and Foundry Services VP and General Manager, James L. Klein, said recognition from the industry and customers supports the company’s goals of
continuing its GaN R&D program leadership while growing TriQuint’s
commercial gallium nitride portfolio. “TriQuint’s GaN
programs continue to gain
recognition and I am
pleased that the industry has once again honored our discoveries.
Government-funded contracts not only support future defense applications, but should lead to new commercial products that can substantially advance the capabilities of
communications and radar systems,” he said.
TriQuint’s expertise with gallium nitride circuits continues to stimulate interest from other areas of the international semiconductor community including those at the US Army Research Laboratory (ARL). TriQuint recently announced a Cooperative Research and Development Agreement with the ARL to create
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www.compoundsemiconductor.net April / May 2012
Richard Stevenson, Editor, comments:
“GaN is widely touted as the most promising material since silicon. This wide bandgap semiconductor has already spawned a multi-billion dollar LED market, and with TriQuint's help, it is going to make a big splash in the switching arena.”
advanced circuits based on its E/D-mode GaN technology.
TriQuint Semiconductor is proud of its defense and commercial products / foundry services heritage. The company’s continuing development of innovative product solutions and renowned foundry services supports the RF / microwave / millimeter wave needs of global business. TriQuint’s success is based on trust, value, unrivaled support and an in-depth understanding of high-power, high- frequency active devices using gallium nitride (GaN) and gallium arsenide (GaAs) technology.
© 2012 Angel Business Communications. Permission required.
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