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photonic routing platform relying on hybrid SOI integrated photonic ICs to incorporate all the routing functions. These included label detection (imec), control signal generation (HHI, IHP), wavelength conversion (NTUA, TU/e, TU Berlin) and wavelength routing (Lionix, AMO).
Finally, a routing machine with over 160 Gb/s aggregate capacity was built by NTUA and Telecom Italia Lab.
Imec says the project has answered the growing demand for bandwidth hungry internet applications which stresses the available capacity and performance of current optical core networks. Power efficiency, size and equipment costs are key issues in these networks and increasingly more difficult to keep within acceptable limits.
Electronic carrier routing systems consume and dissipate large amounts of electrical power and heat respectively. Bringing photonics technologies deeper and deeper within these routers can improve their performance and decrease power consumption, says imec.
The R & D institute’s work within the project focused on the optical label detector. In the proposed routing architecture the optical data packets are labelled with a wavelength code, which has to be extracted from the packet and sent to the routing unit.
The label extractor consists of an optical demultiplexer with very high resolution (12.5 GHz) fabricated on imec ‘s Silicon photonics platform and integrated with high efficiency InGaAs photodetectors.
Imec adds that reaching the required resolution turned out to be very challenging and needed an in-depth study of silicon micro- ring resonators. The specifications could be met by using single ring resonator based filters.
The ring resonators have integrated resistors, which allow fine tuning of the wavelength channels (bottom electrodes) through the thermo-optic effect. They are connected to evanescently coupled InGaAs photodetectors using the heterogeneous integration technology developed by INTEC, imec’s associated laboratory at Ghent University.
The detectors had an efficiency of close to 1 A/W and were operating at the speed of 1 GBit/s (up to 5 GBit/s). Finally the device was packaged in collaboration with Fraunhofer IZM group based in Berlin. The device is now ready for operation in a system test bed.
The results obtained in the projec,t and in particular the exhaustive study on the micro-ring resonators, are not only relevant for realising the optical label extractor. Imec says they also form an important input for the institute’s optical interconnect program which requires high performance demultiplexers for increasing the bandwidth in optical chip-to- chip links. What’s more, they could be used in optical sensors and non-linear devices.
Riber and imec continue to
merge III-Vs with CMOS The two organisations aim to advance CMOS devices using high-mobility Germanium and III-V compound semiconductor channels
MBE kit supplier Riber has signed an agreement with R&D institute imec to continue to collaborate on developing epitaxy process technologies for next-generation III-V CMOS devices.
The agreement follows a successful collaboration in the field of advanced channel materials for high-performance CMOS scaling, Germanium and III-V compound semiconductor materials.
In the quest for miniaturisation, technology has come to a point where CMOS scaling beyond the 45 nm node cannot be achieved by simply reducing transistor dimensions. What’s more, the need for small form factors coupled with the stringent requirement of low current leakage or low energy performance has become critical, especially in next-generation mobile devices.
Imec and its core partners on the Germanium and III-V devices program are exploring the efficacy of high-mobility channel materials for CMOS devices for advanced nodes. Together with Riber, the bottleneck issue of gate stack passivation have been tackled, resulting in effective passivation techniques for Germanium and GaAs.
Riber’s 200 mm III-V and metal oxide MBE cluster offered the required extremely clean background and absence of any interfering gas phase components, enabling material and interface control on the atomic level.
This resulted in the successful development of a passivation scheme for the MOS gate stack module. Amongst others, it was shown that controlling the GaAs surface reconstruction followed by a H2S passivation treatment and in-situ high-k deposition was crucial to create a well-passivated MOS structure with record-low interfacial state density. What’s more, the world’s first successful MOS capacitors on a new high-mobility candidate material, GeSn, were made in the 200 mm Riber MBE cluster.
In the new project, the suitability of Riber’s 300 mm UHV chamber (ISA300), equipped with in-situ tools for surface analysis, and clustered with 300mm Si CMOS production equipment, will be evaluated for the production of advanced CMOS devices based on high-mobility Germanium and III-V channels.
The project has three main aims. Firstly Riber’s UHV chamber will be analysed for its control of surface structures. The collaboration will also see how moving from a research environment 200 mm platform to a 300 mm fab will affect gate stack passivation. The final target is to demonstrate the technological viability of a 300 mm MBE-module, clustered with ‘standard’ 300 mm Si CMOS production equipment.
Frédérick Goutard, Riber CEO comments, “Participating in early stage research is intrinsic to Riber’s aim to strengthen
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www.compoundsemiconductor.net April/May 2012
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