product news ♦ compound semiconductor ♦ news digest Product news
JX Nippon Mining & Metals to transfer its InP compound semiconductor epitaxial wafer business to Optrans Corporation
JX Nippon Mining & Metals Corporation has decided to transfer its indium phosphide (hereinafter “InP”) compound semiconductor epitaxial wafer business to Optrans Corporation.
With this transfer of part of its compound semiconductor business, JX Nippon Mining & Metals will focus on compound semiconductor substrates other than epitaxial wafers from now on.
Moreover, JX Nippon Mining & Metals will form a business tie-up in the InP compound semiconductor business with Optrans and develop high-quality semiconductor substrates by leveraging the synergy with Optrans. JX Nippon Mining & Metals will provide Optrans with its InP compound semiconductor substrates, which feature exceptional processing accuracy, including flatness, and JX Nippon Mining & Metals will benefit from Optrans’s epitaxial technology,1 which is particularly suitable for mass production.
Today InP compound semiconductor substrates are mainly used in photodiodes and light emitting diodes for optical communications, and JX Nippon Mining & Metals holds about a 50 percent share of the world market in this area.
JX Nippon Mining & Metals anticipates that, through this business tie-up, it will be able to go beyond optical communications uses and promote the development of new applications for semiconductor substrates, including usage in solar cells and sensors—areas where demand is anticipated to grow in the future.
1. Epitaxial technology is a process for depositing on the surface of compound semiconductors multiple layers of very thin single-crystal film (ranging in thickness from a few nanometers to
a few microns) to give the semiconductor light- emitting and -receiving functions.
ETH Zurich orders Black Magic Plasma Enhanced CVD system from Aixtron.
AIXTRON AG announced an order from ETH Zurich for a Black Magic Plasma Enhanced CVD system to be installed at the Nanotechnology Center in Ruschlikon, Switzerland.
The Nanotechnology Center is a unique, public private partnership between IBM Research and ETH Zurich. The new system, used for single wall carbon nanotube deposition, is 6-inch in configuration and will be commissioned by the local AIXTRON support team in the first quarter of 2011.
Dr. Christofer Hierold, Professor of Micro and Nanosystems, Department of Mechanical and Process Engineering at ETH Zurich, comments, “We have been looking for a system that is flexible enough to fulfill the requirements of a multi-user lab serving both ETH and IBM. AIXTRON’s Black Magic system fulfills this requirement and will fit to our needs when we kick off advanced carbon nanomaterial research at the Nanotechnology Center.”
AIXTRON’s Black Magic systems use unique rapid heating and plasma technologies which have been field-proven since 2005. They have enabled many leading research institutions all over the world to produce carbon nanotubes and graphene. The Nanotechnology Center is a dedicated new research facility with purpose-built clean rooms and “noise-free” labs shielded against external vibrations, acoustic noise, electromagnetic fields and temperature fluctuations. The purpose of the new laboratory is to push the frontiers of research into new semiconductor materials and devices.
For more information on the Nanotechnology Center, visit:
www.zurich.ibm.com/nanocenter For more information on ETH, visit:
ww.eth.ch For further information on AIXTRON:
www.aixtron. com.
October 2010
www.compoundsemiconductor.net 91
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133