technology III-V microelectronics
Figure 7. On-wafer measured S-parameters of a four-stage mHEMT amplifier SMMIC. Small signal gain of more than 16 dB is realized at 460 GHz.
Measurements of this amplifier reveal that it delivers a very flat gain characteristic. Linear gain exceeds 19 dB from 295 to 320 GHz, and it hits a maximum gain of 21 dB at 300 GHz (see Figure 5).
We have also produced a handful of amplifier MMICs with remarkable bandwidth and low noise figures for operation in frequency bands between 220 and 500 GHz. These amplifiers should help to spur development of high resolution imaging systems, wireless ultra-high-capacity communication links and sub-millimeter-wave spectroscopy.
One example of this type of amplifier is a four-stage, 460 GHz S-MMIC (see Figure 6). In this case, the amplifier was designed to deliver high small-signal gain and low noise. It fulfills these goals, delivering a peak gain of 16.1 dB at 460 GHz when driven at a drain voltage of Vd
= 1 V, a gate voltage of Vg = 0.2 V, and a drain
current of 23 mA (see Figure 7). Small-signal gain exceeded 13 dB across the range 433-465 GHz.
Amplifiers such as this, along with others that we have showcased in this article, are proof of our expertise in high-speed transistors and accompanying MMIC and packaging technology.
These recent scaling advances, which re-enforce our position as the leading pioneer of high-speed devices and circuits within Europe, have equipped our mHEMTs for terahertz operation and are paving the way for terahertz ICs.
Further reading I Kallfass et al. 2009 Proc. of SPIE 7485 A Leuther et al. 2010 IPRM Technical Digest 425 A Tessmann et al. 2010 IMS Technical Digest 53
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www.compoundsemiconductor.net October 2010
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