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conversion for high power applications such as solid-state electrical substations and wind turbine generators. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 % reduction in electricity consumption through increased efficiencies in delivery of electrical power. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.
Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.
It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Other promising applications and advantages for these devices include:
* Power-management and power-conditioning
systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10- 100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
* A variety of energy storage, high- temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy- management solutions.
GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment
to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration.
“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concluded Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”
Strategically located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor is an innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices.
GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, fabrication, and testing.
Australia’s Crompton Lighting Delivers LUXEON- Based LED Downlighting
Developed in collaboration with Future Lighting Solutions, the eco-friendly downlights will replace MR16 halogen models.
Energy-saving LUXEON-based downlights have come to Australia with the release of XL LED Downlights from Crompton Lighting, one of the country’s largest and best-known lighting brands and a division of the Gerard Lighting Group.
The fixtures consume 70% less energy and provide a much longer 50,000-hour lamp life than their 50W MR16 halogen counterparts. LED solutions specialist Future Lighting Solutions provided engineering assistance including LED and driver selection.
October 2010
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