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but Research and Markets believes this overall situation will change as GaN and SiGe parts invade the market and expand their positions.
At present, TriQuint Semiconductor and WIN Semiconductor are said to be two of the particularly important MMIC fabs. Although the majority of manufacturers offer GaAs MMICs, many could potentially also offer GaN MMICs (some do already)
Amongst the equally important fabs that offer SiGe there are some very large players such as Freescale, IBM Microelectronics, Infineon, NXP, RFMD and TSMC.
The majority of these firms have their ultimate headquarters located in the USA and these include many of the major players such as Avago Technologies, Freescale, IBM Microelectronics, Maxim, Skyworks, TriQuint and the leading concern RFMD.
The report forecasts the following: · As GaN and SiGe increasingly invade the “GaAs space”, a progressive decrease in the number of players offering GaAs by 2015 (and a corresponding decrease in the GaAs MMIC production by the remaining players). · A significant and growing increase in GaN MMIC production (often from major existing GaAs players). · A progressive decrease in the production of InGaP chips (by providing inexpensive linearizing feedback or feed-forward GaAs or other MMICs can be used as linear PAs) · Slowly shrinking InP markets – probably leaving mainly ISM or spacecraft markets. · Some growth in the small markets for SiC MMICs (e.g. L-bnd AESAs). · A significant and growing increase in SiGe MMIC production (SiGe is very good option for high- speed signal processing).
The most notable change since Engalo’s 2008 report is the doubling of the MMIC houses addressing the cell phone market. This is not surprising considering the relatively large size of the market sector.
It was found that five more players than in 2008 are addressing the burgeoning SATCOM market. Ka- band (broadband service) is now well established and growing strongly.
TriQuint Releases 150mm GaAs Optical pHEMT Process Technology
The firm’s latest TQP15 technology will enable cost effective millimeter wave MMICs for use in applications such as VSAT, satellite communications and point to point radios.
TriQuint Semiconductor, a leading RF front- end product manufacturer and foundry services provider, today announced the release of its latest 150mm Gallium Arsenide (GaAs) commercial foundry process, TQP15, to full production.
TQP15 is targeted at the Ka-band segment and is designed for cost-effectively building millimeter wave (mmWave) MMICs for applications such as VSAT, satellite communications and point to point radios.
Manufactured in TriQuint’s high volume GaAs fabrication facility in Hillsboro, Oregon, TQP15 is the latest offering in the firm’s well-established Pseudomorphic High Electron Mobility Transistor (pHEMT) process portfolio. TQP15 utilizes optical lithography to reduce cost when compared to traditional E-beam based solutions. It also incorporates refractory gate metal architecture which does not exhibit the standard metal gate sinking failure mechanism of non-refractory gate pHEMT processes.
“The TQP15 process leverages TriQuint’s mature manufacturing capabilities used in the production of millions of pHEMT-based wafers,” said Steve Grant, Vice President of Global Operations at TriQuint. “Customers can be confident TQP15 benefits from the stability of the base technology. And it is cost- effective because of the innovative use of optical lithography.”
Throughout the development cycle, the process has been made available to select customer designers to collect feedback and aid process characterization.
Paul Blount, President of Custom MMIC Design Services, notes that “TQP15 offers us an economical high-frequency pHEMT process. We have successfully used TQP15 for high efficiency
October 2010
www.compoundsemiconductor.net 71
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