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CSTG completes
qualification of Hamilton wafer fabrication facility
Compound Semiconductor Technologies Global announces that it has completed the qualification of its Hamilton wafer fabrication plant, following the acquisition of the facility from Intense Ltd in January 2010.
In addition to providing continuity of supply of all high power laser products to Intense throughout the qualification period, transfer of all products from the former facility on the West of Scotland Science Park was completed at the end of September.
The Hamilton facility is now engaged in the manufacture of a wide range of GaAs and InP foundry products including high power 650nm- 1.6um lasers, 1310nm-1550 single mode lasers and gain elements, semiconductor optical amplifiers, super luminescent LEDs, quantum cascade lasers, InGaAs detectors and custom monolithic chip solutions.
CEO Neil Martin commented, ‘We set ourselves a very aggressive timetable of an exit from the former facility within 6 months which included equipment transfer and staff consolidation. I am pleased to report that the Hamilton acquisition will fulfil its aim in allowing us to continue our expansion with both enhanced capacity and capability to service growth in all sectors of the compound semiconductor markets.’
Engineering focus is now shifting to expanding the portfolio of foundry processes into materials technologies such as Gallium Nitride and Antimonides, and device technologies such as Quantum Cascade lasers, VCSELs and high speed edge emitting lasers.
Sony launches 400 mW Blu-ray laser
Japanese electronics giant Sony claims to have launched the world’s first 400 mW laser for recording and playback of Blu-ray Discs.
Sony has started to ship 400 mW blue-violet semiconductor laser chips that are suitable for recording and playback of Blu-ray Discs.
This powerful source is claimed to be the first that can be used to support the BDXL format, which was first defined this June. This format supports 100GB and 128GB write-once discs and 100GB re-writable equivalents.
According to Sony, the 400 mW output gives the makers of Blu-ray equipment a greater choice of lenses and prisms.
The key to making the lasers has been an improvement in GaN crystal quality, which stems from the introduction of a new MOCVD growth system. Superior GaN material prevents device failure via optical damage to the laser’s facets.
The 400 mW is mounted in a package with a 5.6 mm diameter. If a slimmer 3.8 mm diameter package is used, power is limited to 350 mW.
Manufacture of the lasers is carried out by Sony’s subsidiary, Sony Shiroishi Semiconductor Inc.
Figure caption: Sony’s lasers can deliver 400 mW at 405 nm, and operate at up to 85 degrees C
October 2010
www.compoundsemiconductor.net 43
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