product news ♦ compound semiconductor ♦ news digest involved with source code or firmware.


Avago’s SoC BT navigation engine is the first mouse sensor that has a fully synchronized BT navigation core and baseband circuitry. All communication and algorithms involved between the laser light sensor and RF stages have been optimized for the application.


The ADNS-7630 device supports multiple I/Os which can be configured as buttons and LED indicators. Each button can be programmed to have several functions, depending on if it is clicked once, double-clicked, or long-pressed. Button functions include KeyMap for keyboard shortcut keys, media buttons for audio control, and mouse resolution increase/decrease/rotate features.


The ADNS-7630 product also supports both mechanical and optical z-wheel and tilt-wheel functions, programmable resolution, 4-axis sensor rotation and configurable low power operating modes for extended battery life.


Avago’s free MConfig software gives manufacturers the ability to store configuration settings in an external 128 kbit EEPROM so that a diverse range of markets can be served by one basic ADNS-7630 design.


Additional ADNS-7630 Specifications • Programmable resolution: 200-3000 cpi in 250 cpi increments


• Single 3 V supply


• Up to 10 I/O pins for flexible configuration • 4-axis sensor rotation: 0°, 90°, 180° or 270°


The ADNS-7630 device is priced at $5.00 each in 10,000 piece quantities. Samples and production quantities are available now through Avago’s direct sales channel and worldwide distribution partners. Avago also offers the ADNK-7633 reference design kit to qualified mouse designers.


Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.


SemiSouth all-SiC power Module Crosses A Bridge


The module uses a high speed, normally- off 1200V SiC VJFET technology, and the firm says it demonstrates record low hard- switching performance (1.25mJ) in an optimized, commercially-available (SP1) module configuration.


SemiSouth Laboratories, a manufacturer of silicon carbide (SiC) technology for high-power, high- efficiency, harsh-environment power management and conversion applications, has presented a paper entitled ‘Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules’ at the European SiC and Related Materials Conference.


The paper describes the development of an all-SiC- based power module for use in high frequency and high efficiency applications. SemiSouth co-founder and CTO Jeffrey B. Casady, co-authored the paper with lead author and presenter, David C. Sheridan, Director of Engineering.


Casady commented “As SiC devices migrate to applications above 20-30kW, multi-chip power modules offer the most energy-efficient and practical solution for a wide range of applications such as high-power commercial solar inverters, electric vehicle inverters and electric actuators in aircraft. However, the high speed transients capable in SiC devices at high voltages and currents highlight the need for careful design considerations for gate drive, wiring, layout, and module parasitics.”


The module described uses SemiSouth’s high speed, normally-off 1200V SiC VJFET technology, and demonstrates record low hard- switching performance (1.25mJ) in an optimized, commercially-available (SP1) module configuration. Parasitic oscillations and cross-conduction were shown to be well-controlled using optimized internal snubbers and a negative gate voltage rail. Utilizing parallel combinations of enhancement mode SiC VJFETs (36mm²) and Schottky diodes (23mm²), a total on-resistance of only 10mΩ (2.7mΩ/cm²) was achieved at drain currents of 100A in the commercially available standard module configured as a half-bridge circuit.


Concluded Casady, “A significant percentage of the October 2010 www.compoundsemiconductor.net 125


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