review news
Laytec installs Single-port EpiCurveTT for Aixtron showerhead
LayTec has successfully installed an EpiCurveTT on an Aixtron Close Coupled Showerhead (CCS) MOCVD system at Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany. This is the first time an EpiCurveTT has been installed on a showerhead system on only one viewport.
In the past, since the viewports of such systems are so small, 2 separate windows were used: one for curvature and one for temperature and reflectance measurements. Now, due to the improved design, all three parameters are measured through one standard AIX CCS viewport.
Chunyu Wang and his team at IAF will use the tool for growth control of GaN on silicon substrates. The simultaneous in-situ monitoring of wafer temperature, reflectance and curvature will be used to engineer the
gas-foil rotation MOCVD systems where the azimuth of the rotating wafers is unknown.
The standard EpiCurveTT without AR measures randomly either along the major axis (larger bow - blue arrow in Fig. 2) or along the minor axis (smaller bow - red arrow in Fig. 2). In a Planetary reactor the phase of rotation is unknown. As a result, the signal looks “noisy” (red line in Fig. 3): it oscillates between the maximum and the minimum of the azimuthal aspherical bow.
stress in the epilayers. Wang commented, “The new sensor will help us to get flat and crack-free GaN layers on Si substrates for future sophisticated electronic devices.”
Recently, LayTec launched EpiCurveTT AR (advanced resolution) for measurements of the aspherical curvature component during epitaxial growth. The tool is claimed to be the perfect solution for Planetary and other
The new tool measures curvature along two perpendicular axes and eliminates 2nd order azimuthal bowing effects. The signal-to- noise ratio of the tool with advanced resolution improves the curvature signal from ±8 km-1 (red line) to ± 0.2 km-1 (black line) and measures only the main curvature component by eliminating the aspherical contribution.
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October 2010
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