industry news ♦ compound semiconductor ♦ news digest
The AWT6264 delivers high output power, exceptional linearity and extremely high efficiency for world-wide mobile WiMAX coverage of the 2.3- 2.7 GHz spectrum. This PA supports 4G wireless connectivity devices, including smartphones, mobile internet devices, netbook/notebook PCs, and PC cards/USB dongles.
“We have a valued, long-standing relationship with Samsung in providing solutions across a broad range of wireless and 3G standards,” said Michael Canonico, VP, Worldwide Sales for Anadigics. “With the introduction of the Epic smartphone, our AWT6264 product is now playing a key role in bringing 4G features to end users as well. As the 4G market continues to evolve and grow, Anadigics looks forward to additional opportunities to deliver highly effective RF components that enhance the mobile user experience.”
According to Samsung, the Epic 4G is part of a new breed of smartphones that offer the best in screen, speed and content quality for a premium end-user experience, while also providing a fully integrated multimedia, messaging and social networking experience. The Samsung Epic 4G also features an exceptionally thin smartphone design with a slide out, full QWERTY keyboard and 4-inch Super AMOLED touchscreen display.
“We are well aware of the efforts Samsung makes to incorporate the best technology in each of its products,” said Mario Rivas, President and CEO for Anadigics. “And we are very pleased to receive feedback from Samsung that our AWT6264 PA meets and exceeds their requirement for optimizing the performance of the Epic 4G.”
The AWT6264 PA is a 4 mm x 4 mm x 1 mm device that delivers high output power, linearity and efficiency for high data rate WiMAX signals. With an integrated step attenuator and featuring fully-matched RF ports, it supports faster product development cycles and requires less PC board space than other, more discrete solutions.
Specific features of the AWT6264 include: ·
Delivering +25 dBm linear output power, meeting WiMAX spectrum mask. · · ·
Contributing typically 2.5 percent EVM. Providing 32 dB of RF gain.
Operating with a typical power-added efficiency of 24 %.
SoloPower Are Only Company With UL Certificate for a Flexible CIGS Module
The company says this is the first UL-certified product in a line of high-power flexible modules being introduced initially to European and North American markets.
In a watershed breakthrough for the solar photovoltaic (PV) industry, SoloPower, a California- based manufacturer of flexible, thin-film solar PV cells and modules, has received UL certification for its flexible, CIGS modules. The company say this is a first-ever achievement for the PV solar industry.
“As governor, I have made it a point to make California an environmental leader with a global footprint. SoloPower’s advancement demonstrates that California is leading the way in technology innovation for the green economy,” said Governor Arnold Schwarzenegger. “We welcome this type of innovation that creates jobs, strengthens the economy, and helps protect the environment.”
This is the first UL-certified product in a line of high-power flexible modules being introduced initially to European and North American markets. The flexibility and high-power rating of these products will allow SoloPower’s customers to reduce balance-of-system and installation costs, while their low weight and application features will facilitate solar installations where they are otherwise impossible.
“The certification of SoloPower’s flexible CIGS module is an important step toward the realization of lightweight, high-power, flexible solar modules with potential to expand the roof-top solar market and reduce balance of system costs. It is an important milestone for the industry. I feel very gratified to see, after a 30-year career in Thin Film CIGS PV at NREL, the technology become mature,” said Rommel Noufi, Principal Scientist of the National Renewable Energy Laboratory.
UL certification was granted following rigorous testing at an independent laboratory. SoloPower’s
October 2010
www.compoundsemiconductor.net 89
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133