news review
Aldo Kamper succeeds Dr. Rüdiger Müller as President and CEO of OSRAM
AS of October 1, 2010, Aldo Kamper (40), a proven LED expert and time-tested executive, is succeeding Dr. Rüdiger Müller (65) who, after heading optoelectronic semiconductor business for 22 years at OSRAM and formerly at Siemens, is bidding farewell on reaching retirement age.
Martin Goetzeler, CEO of the parent company OSRAM said: “Down to this very day, Dr. Rüdiger Müller has been one of the driving forces worldwide in the development of LED technology, which now reaches far into our everyday lives. With Aldo Kamper we have been able to win a successor from our own ranks – someone who will advance OSRAM Opto Semiconductors and make his own mark.”
Dr. Müller hands over the reins of OSRAM Opto Semiconductors to Aldo Kamper on October 1, 2010. Kamper started his professional career at OSRAM in 1994 after completing his business administration studies. Since 2006, he has held the post
of Executive Vice President & General Manager Specialty Lighting at OSRAM Sylvania in the US.
Dr. Rüdiger Müller’s retirement brings an era to an end at OSRAM Opto
Semiconductors and in LED technology. Müller headed the optoelectronic semiconductor
business at Siemens from 1988 and, in 1999, was also founding CEO of OSRAM Opto Semiconductors, in which Siemens’ LED and infrared business was pooled with OSRAM’s lighting competence. Besides strong growth and the continuous expansion of production capacities his name is most closely linked with technological advances in optoelectronic semiconductor technology.
Crucial innovations, such as thin-film technology, direct blue or green semiconductor laser diodes, the first OLED product or the first surface-mountable LED (SMT-LED), innovations that set standards to this very day, emerged under his leadership.
Kopin Awarded $750,000 to Develop Advanced Nitride Electronic Materials
KOPIN CORPORATION has received a two-year, Phase II Small Business Innovative Research (SBIR) contract. The contract will cover the development of Aluminum Indium Nitride-based high electron mobility transistors (AlInN HEMTs). The $750,000 award through the Missile Defense Agency (MDA) will leverage Kopin’s established capability in Group III-Nitrides to enhance the performance and manufacturability of AlInN materials.
“This SBIR program by MDA validates the potential of the AlInN material system for high-performance electronic devices,” stated John C.C. Fan, Kopin’s President and CEO. “Our long-term objective is to
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www.compoundsemiconductor.net October 2010
commercialize AlInN-based electronic materials, which parallels our highly successful GaAs HBT wafer business.”
Wayne Johnson, Kopin’s Vice President of Technology said, “The AlInN material system has shown promise to extend the power and frequency capability of GaN-based HEMTs.”
“During the Phase I effort, we demonstrated results in AlInN/GaN heterostructures including record-low sheet resistance. The goals of Phase II will involve optimization of the AlInN HEMT structures and fabrication of HEMT devices for X-band electronics applications in collaboration with leading- edge GaN foundries,” concluded Johnson.
GaAs device demand will continue to see continued growth through 2014
The GaAs market staged a strong recovery toward the end of a tumultuous 2009 as a result of positive trends in wireless markets. The Strategy Analytics GaAs and Compound Semiconductor Technologies (GaAs) service report, “GaAs Industry Forecast 2009-2014,” calculates that despite a recession, GaAs industry revenues managed to escape a drop in 2009, with a strong performance in the second half of the year translating to year-on-year revenues remaining flat at $3.7 billion.
GaAs technology will maintain its position as the enabling technology for next generation cellular handsets. The smartphone category of the handset market, in particular, provided a vital lifeline in 2009, boasting stronger than average annual growth in terminal volumes.
With an increasing average number of GaAs power amplifiers per terminal as well as increasing switch complexity in this sector, GaAs device demand from next generation handsets will grow faster than overall industry revenue growth.
“Our analysis incorporates individual wireless, consumer, infrastructure and defence market forecasts—taking into account technology trends,” noted Asif Anwar at Strategy Analytics. “There is no question that the improving capabilities of silicon and silicon germanium technologies, as well as emerging technologies such as gallium nitride, will provide increasing competition for GaAs technologies.”
“Despite this competition, GaAs device demand will continue to see continued growth through 2014. The market will grow at a compound annual growth rate of 5% to be worth over $4.7 billion,” concluded Anwar.
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