news digest ♦ compound semiconductor ♦ industry news
NC wafer fab : GaN1, targeted at high power applications, and GaN2, targeted at high linearity applications. RFMD also offers an Integrated Passive Component (IPC) technology optimized to complement high power applications.
RFMD’s advanced GaAs pHEMT technologies are complementary to the Company’s GaN technologies and other power semiconductor technologies for the design of multi-chip modules (MCMs).
Bob Van Buskirk, president of RFMD’s Multi-Market Products Group (MPG), said, “RFMD is the world’s largest manufacturer of III-V circuits for electronics, including both GaAs and GaN. For the last 15 years RFMD has been supplying our customers world-class products manufactured in our wafer fabrication facilities. Now we are presenting this same opportunity to others.
“With our world class GaAs technology, technology expertise, high volume manufacturing, industry- leading cycle times and unprecedented levels of support, our foundry service enables a wide range of foundry customers to utilize advanced compound semiconductor technologies in an efficient and cost effective business model,” he concluded.
RFMD’s Foundry Services business unit was formed to deliver RFMD’s high-reliability, high- performance and price-competitive process technologies to external foundry customers immediately upon process qualification and production release.
RF Micro Devices designs and manufactures high-performance semiconductor components. Its products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.
An interview with RFMD on its introduction of GaAs foundry services will appear in the October issue of Compound Semiconductor magazine.
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www.compoundsemiconductor.net October 2010
GeneSiC Signs $2.53M Contract To Develop SiC Thyristor-based Devices
The agreement is with the Advanced Research Projects Agency – Energy (ARPA-E). The devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.
The Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with GeneSiC Semiconductor towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices.
These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.
“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Ranbir Singh, President of GeneSiC.
“Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FACTS) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC- based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon- based Thyristors,” he continued.
In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost.
The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy
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