161
Figure 3: The new Osram UX:3 high brightness LED GaN on Silicon LED process.
Figure 4: The high voltage Luxeon H.
Cree’s SC3 Technology Platform, the XB-D White LED delivers up to 139 lumens and 136lm/W in cool white (6000K) or up to 107 lumens and 105lm/W in warm white (3000K), both at 350mA and 85°C. This LED further simplifies designs, ultimately removing a key barrier to widespread LED implementation up-front system cost. The XB-D LED was claimed to deliver twice the lumens-per-dollar of other LEDs, in the industry’s smallest lighting-class footprint of 2.45mm x 2.45mm. The XB-D LED is 48 percent smaller than the XLamp XP package and ideal for lighting applications where high lumen density and compact light sources are required. Osram: Researchers at Osram Opto Semi- conductors had succeeded in manufactur- ing high-performance prototypes of blue and white LEDs, in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 millimeters, show in figure 3. The silicon replaces the sapphire commonly used until now without a loss in quality or performance. Already in the pilot stage, the new LED chips are to be tested under practical conditions, meaning that the first LEDs on silicon from Osram Opto Semiconductors could hit the market in just two years. This is a pioneering devel- opment for several reasons. On account of its widespread use in the semiconductor industry, the availability of large wafer diameters and very good thermal properties, silicon is an attractive and low-cost option for the lighting markets of the future. Quality and performance data on the fabricated LED silicon chips match those of sapphire-based chips: the blue UX:3 chips in the standard Golden Dragon Plus package achieve a record brightness of 634 mW at 3.15 volts, equivalent to 58 percent efficiency. These are outstand- ing values for 1mm2
chips at 350mA. In
combination with a conventional phosphor converter in a standard housing – in other words as white LEDs – these prototypes correspond to 140lm at 350mA with an ef-
ficiency of 127lm/W at 4500K. Over 17,000 standard 1mm2
LED can be made from a 6”
wafer however Silicon wafers are already up to 12”in diameter so the number of LEDs produced in the future will enable costs to tumble due to scale. Photonstar: In January the halogen emula- tion version – “ChromaWhite Tungsten+” won the visitors choice awards at The ARC Show for Photonstar. Following feedback from specifiers, this model has subsequent- ly been superseded (in October) by the new ChromaWhite Tungsten H CLE module which provides faster response times and matches leading halogen 50W GU10 dimming curves in terms of CCT.
FEBRUARY 2012 Cree: introduced the new XLamp XT-E White LED, which is based on a new silicon carbide technology platform which dramati- cally transforms LED price-performance ra- tios. The XT-E comes in a 3.45mm x 3.45mm package to deliver up to 148 lumens and 148lm/W in cool white (6000K) or up to 114 lumens and 114lm/W in warm white (3000K), both at 350mA, 85°C. LED Engin: unveiled the world’s first halo- gen-like dimming from a single LED emitter using a constant current source, together with standard 0 -10V dimmers, to enable the colour temperature of the light getting warmer as it dims. The LED emitter changes from 3200K at maximum output to a warm 2400K glow when fully dimmed. This halogen-like dimming is particularly useful in hotels, restaurants and bars, where the technology can deliver the right ambience for levels of brightness. LED Engin’s latest multi-colour (RGBW) emitters were announced to provide superior in-source colour mixing, particu- larly in narrow-spot beams of less than 10°. Recently introduced 8° and 15° lenses, com- bined with LuxiGen multi-colour emitters, open up new applications within the stage and studio and architectural markets where high intensity, focused, coloured light for
distance lighting is required. In combina- tion with secondary optics, these emitters deliver dynamic colour entertainment with sufficient “throw” and precision control, without compromising lux-on-target. Nichia: announced its most efficient white LED in production to date, the 5mm NSPW510HS-K1 which achieves 170lm/W. The 5mm LED has a typical forward voltage of 2.8V and a maximum forward current of 20mA with a beam angle of 30 degrees. Osram: launched the new generation of Oslon SSL LEDs to provide a luminous flux of typically 98lm in warm white (3000K) and 113lm in 5000K, with an operating current of 350mA at an application temperature of 85°C in the chip. With its typical luminous efficacy of 96lm/W and improved 3mm x 3mm package design, the Oslon SSL is a particularly temperature stable light source at elevated temperatures. The combina- tion of higher luminous flux and reduced forward voltage of 2.9V equals an efficiency increase of approximately 25 percent, when compared with the previous generations. Philips Lumileds: introduced its next generation high-voltage LED - the Luxeon H as shown in figure 4. With significant performance enhancements the Luxeon H enables the broadest range of retrofit bulbs and space constrained applications while providing the light output, efficacy, and quality of light. Luxeon H has exceptional performance: • CCT: 2700K and 3000K with minimum 80 CRI;
• Superior Quality of Light – Freedom From Binning;
• Single 3-step MacAdam Ellipse color space;
• No flux bins; no Vf bins; • Colour over angle specified at a low 0.02 du’v;
• Hot tested and specified at Tj=85°C • Typical Efficacy: 90lm/W at 40mA, 100V, Tj = 85°C;
• 100V / 200V package rated for 4W – 8W; • Typical Flux: 320 – 660 lumens at 20
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