April, 2011
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Page 97 Cree: 650V SiC Schottky Diodes Improve Efficiency
Durham, NC — Targeting the latest data center power supply require- ments, Cree, Inc. has introduced its new line of Z-Rec™ 650V Junction Barrier Schottky (JBS) diodes. The new JBS diodes provide blocking voltage to 650V to accommodate recent changes in data center power architecture that industry consult- ants estimate will result in energy efficiency gains of up to 5 percent. Recent trends in data center
power architecture call for the elimi- nation of the 480V-to-208V conver- sion to boost overall data center effi- ciency. Instead of providing 120VAC from the 3 phase/208V line to neu- tral, server power supplies will now be expected to accept a broader uni- versal line voltage range of 90 to 305VAC (277V plus a 10 percent guard band) directly from the 3 phase/480V line to neutral. This architecture eliminates the need for the step-down power transformer, along with the related energy losses and expense. Optimal operation of server power supplies with this high- er input voltage range requires
Hi-Temp Proximity Sensors from ASI
Mechanicsburg, PA — Automation Systems Interconnect, Inc. is introduc- ing 50mm sensors to a complete line of high temperature inductive proximity sensors. The ASI high-temperature sensors are available in stainless steel housings for high temperature appli- cations of 250°C (482°F).
power components such as Schottky diodes that have an extended maxi- mum blocking voltage of 650V. Cree’s new 650V-rated devices
provide an ideal solution for design- ers of state-of-the-art power supplies for data center servers and commu- nications equipment. The company’s new Z-Rec silicon carbide diodes not only provide the 650V blocking volt- age needed for these advanced power supplies, but they also further re - duce energy losses, as compared to silicon devices, by eliminating re - verse recovery losses. According to the company, sili-
Silicon carbide Schottky diode.
con carbide technology is critical to developing the next generation of advanced, energy-efficient data cen- ter power system designs because it virtually eliminates diode switching losses. Conventional silicon devices’ switching losses are known to be big
contributors to energy inefficiency, so replacing them with SiC devices can boost the efficiency of the power factor correction stage of the power supply by up to 2 percent, resulting in even greater overall efficiency improvement than with architectur- al changes alone. The initial products in the 650V
Z-Rec Schottky diode family, the C3DXX065A Series, include 4, 6, 8, and 10 amp versions in TO-220-2 packages. All devices are rated for operation from -55 to +175°C. Contact: Cree, Inc., 4600 Silicon
Drive, Durham, NC 27703 % 800-533-2583 or 919-313-5300 fax: 919-313-5558 Web:
www.cree.com
High temperature proximity sensor.
The sensors offer switching dis-
tances of 40mm and are available in NPN or PNP. All sensors that operate above 180°C are designated with “EXT” in the product syntax and require an external amplifier to func- tion. The company offers two amplifier options that meet the criteria in wide range of engineering applications. The high-temperature sensors
are suitable for applications where continuous, reliable functioning at high ambient
required, as in steel mills, rolling mills, metallurgical and glass indus- try, press of chipboard and painting plants for the automotive industry. Contact: Automation Systems
Interconnect, Inc., P.O. Box 1340, Mechanicsburg, PA 17055 % 877-650-5160 fax: 717-249-5542 E-Mail:
info@asi-ez.com Web:
www.asi-ez.com
temperatures is
B&K Precision’s new model 879B LCR meter with ESR is fully redesigned for easy operation, speed, accuracy, and wide measurement ranges. Add to that a backlit 40,000-count dual display, 0.5% basic accuracy, and USB connectivity and you’ve got versatile performance on your bench, or in the palm of your hand.
Get full product specs, and find out where to buy at:
www.bkprecision.com/879B
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