LEDs ♦ news digest ·
Key Note - III-V on Silicon: Challenges and Opportunities - Robert S. Chau, Intel Senior Fellow
SiC and GaN Electronics - Dr. John Palmour, Cree co-founder and chief technology officer, Power & RF, Cree
· · · · Ammono›s ammonothermal method to make
GaN substrates – Dr. Robert Dwiliński, President, CEO, Ammonno S.A.
Tomorrow›s RF chips for mobile devices -
Todd Gillenwater, VP of Technology and Advanced Development, RFMD
Building a Successful III-V Pure Play Foundry
- Dr. John Atherton, WIN Semiconductors ·
Scalable «on-silicon» solutions (GaN-on- Si and Ge-on-Si) using rare oxide buffer layers – Dr. Michael Lebby, General Manager & Chief Technology Officer, Translucent Inc.
· · · · · ·
III-Nitride Lasers Based on Nonpolar/ Semipolar Substrates - James W. Raring, VP of Laser Engineering, Soraa Inc.
Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc.
Perspective of an LED Manufacturer - Iain Black, Philips Lumileds Lighting Company
The CPV Market following its acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU
Commercialisation of GaN on SI based Power Devices at International Rectifier - Dr. Michael A. Briere, International Rectifier
GaN the enabler for true SDR - Professor Rik
Jos, NXP ·
· ·
Holistic Approach to MOCVD vacuum & Abatement - Mike Czerniak, EdwardsVacuum Ltd.
Advances in Wide Bandgap Semiconductors for Power Electronics - Dr. Markus Behet, Dow Corning
Large diameter GaN-on-Si epiwafers for power electronics - Dr Mariane Germain, EpiGaN
· Gallium nitride from both a product perspective and foundry - Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor
· Damage - free Deposition on LED devices – Dr Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd
· Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr Thomas Uhrmann, Business Development Manager, EV Group (EVG)
Please register at
www.cseurope.net and remember to book your delegate place now as numbers will be limited.
CdSe/ZnS QD-LEDs turn troublesome molecules to their advantage
Nestling quantum dots in an insulating egg-crate structure enables optimisation for quantum-dot LEDs according to researchers in the U.S.
Researchers at the Harvard School of Engineering and Applied Sciences (SEAS) have demonstrated a robust new architecture for quantum-dot LEDs (QD- LEDs).
Quantum dots are very tiny crystals that glow with bright, rich colours when stimulated by an electric current. QD-LEDs are expected to find applications in television and computer screens, general light sources, and lasers.
Previous work in the field had been complicated by organic molecules called ligands that dangle from the surface of the quantum dots. The ligands play an essential role in quantum dot formation, but they can cause functional problems later on.
Thanks to an inventive change in technique devised by the Harvard team, the once-troublesome ligands can now be used to build a more versatile QD-LED structure. The new single-layer design, can withstand the use of chemical treatments to optimise the device’s performance for diverse
November/December 2011
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