Equipment and Materials ♦ news digest
• SiC and GaN Electronics - Dr. John Palmour, Cree co-founder and chief technology officer, Power & RF, Cree
• Ammono’s ammonothermal method to make GaN substrates – Dr. Robert Dwiliński, President, CEO, Ammonno S.A.
• Tomorrow’s RF chips for mobile devices - Todd Gillenwater, VP of Technology and Advanced Development, RFMD
• Building a Successful III-V Pure Play Foundry - Dr. John Atherton, WIN Semiconductors
• Scalable “on-silicon” solutions (GaN-on-Si and Ge- on-Si) using rare oxide buffer layers – Dr. Michael Lebby, General Manager & Chief Technology Officer, Translucent Inc.
• III-Nitride Lasers Based on Nonpolar/Semipolar Substrates - James W. Raring, VP of Laser Engineering, Soraa Inc.
• Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc.
• Perspective of an LED Manufacturer - Iain Black, Philips Lumileds Lighting Company
• The CPV Market, following the acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU
• Commercialisation of GaN on SI based Power Devices at International Rectifier - Dr. Michael A. Briere, International Rectifier
• GaN the enabler for true SDR- Professor Rik Jos, NXP
• Holistic Approach to MOCVD vacuum & Abatement - Mike Czerniak, EdwardsVacuum Ltd
• Advances in Wide Bandgap Semiconductors for Power Electronics - Dr. Markus Behet, Dow Corning
• Large diameter GaN-on-Si epiwafers for power electronics –Dr Mariane Germain, EpiGaN
•Gallium nitride from both a product perspective and foundry - Dr Otto Berger, Corporate Advanced
Technology Director, TriQuint Semiconductor
•Damage - free Deposition on LED devices –Dr Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd
•Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr Thomas Uhrmann, Business Development Manager, EV Group (EVG)
MOCVD shipments see first year-over-year decline in 2.5 years
A growing oversupply of LEDs and expiring subsidies in China have contributed to the reduction. On the upside, shipments for GaN-on- silicon reactors saw an upsurge.
IMS Research released the MOCVD chapters of its 300-page “Quarterly LED Supply and Demand Report” in November 2011 which revealed significant changes in MOCVD market share and the MOCVD market outlook.
MOCVD shipments for all applications fell Q/Q and Y/Y to 170 units. It was the first Y/Y decline in at least 2.5 years.
The decline can be attributed to depressed utilisation in the GaN LED space along with a growing oversupply in LEDs, tight credit, facility readiness and expiring subsidies in China. A bright spot was rising shipments of MOCVD systems for GaN on silicon.
MOCVD revenues were down sequentially for the 3rd consecutive quarter and Y/Y for the first quarter in at least 2 years, falling to $340 million.
Veeco led in total MOCVD unit and revenues for the first time, earning a 63% share of tool shipped, shown in Figure 1, and 65% share of revenues. Aixtron’s share fell from 50% to 34% in units and 52% to 32% of revenues.
Veeco did benefit from the recognition of previously shipped MaxBright reactors to the GaN LED market. However, if those were excluded, Veeco still
November/December 2011
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