news digest ♦ Equipment and Materials Technology Officer, Translucent Inc.
• III-Nitride Lasers Based on Nonpolar/Semipolar Substrates - James W. Raring, VP of Laser Engineering, Soraa Inc.
• Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc.
• Perspective of an LED Manufacturer - Iain Black, Philips Lumileds Lighting Company
• The CPV Market, following the acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU
• Commercialisation of GaN on SI based Power Devices at International Rectifier - Dr. Michael A. Briere, International Rectifier
• GaN the enabler for true SDR- Professor Rik Jos, NXP
• Holistic Approach to MOCVD vacuum & Abatement –Dr. Mike Czerniak, EdwardsVacuum Ltd
• Advances in Wide Bandgap Semiconductors for Power Electronics - Dr. Markus Behet, Dow Corning
• Large diameter GaN-on-Si epiwafers for power electronics – Dr. Mariane Germain, EpiGaN
•Gallium nitride from both a product perspective and foundry - Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor
•Damage - free Deposition on LED devices –Dr. Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd
•Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr Thomas Uhrmann, Business Development Manager, EV Group (EVG)
Please register at
www.cseurope.net and remember to book your delegate place now as numbers will be limited.
Riber sees strong
commercial momentum in Europe and Asia
The firm has accepted orders for tools to grow III-V and II-VI compound semiconductors and nitrides for use in optoelectronics and for use in research and development.
French firm Riber, a manufacturer of MBE reactors, has announced the sale of several research systems in Europe and Asia.
The University of Rzeszow has just ordered a double chamber Compact21 research system. It will enable the Institute of Physics to strengthen its development capacities for designing III-V and II-VI component-based semiconductor systems.
In Asia, Riber completed the sale of two research systems to two major research laboratories.
In China, the order to supply a Compact 21 MBE system will allow the Chinese laboratory to increase its research capabilities on nitride optoelectronic technologies design.
In Singapore, a leading research laboratory made the acquisition of one MBE412 system in order to complement its fleet of equipments. With its capacity to process large size substrates, the MBE412 system is a highly competitive and flexible R&D resource.
Ammono cuts prices of smaller GaN substrates
The manufacturer of high quality ammonothermal gallium nitride products is offering customers discounts for the final quarter of 2011.
Ammono, as part of the build up to the January 2012 launch of its new 2-inch c-plane n-type substrates, has introduced discount prices in Q4 for its smaller size GaN wafers which are currently in the company’s stock.
For this special offer Ammono has introduced a simplified purchase procedure which results in a
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www.compoundsemiconductor.net November/December 2011
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