Equipment and Materials ♦ news digest
Brisk 2010 GaAs epitaxial substrate revenue growth expected
Strategy Analytics’ latest report says that 6-inch GaAs epitaxial substrates will be the most prevalent, accounting for slightly more than 80 percent of total device demand over the 2010 to 2015 period.
GT Advanced Technologies president and CEO Tom Gutierrez celebrates the unveiling of the first sapphire boules produced in HTOT’s new sapphire manufacturing facility located in Guiyang City, China. (Photo: Business Wire)
“We were delighted to be part of HTOT’s celebration commemorating their official entrance into the sapphire material industry,” said Tom Gutierrez. “Over the coming months we will work closely with the HTOT team to ensure a smooth ramp to volume production in their new state-of-the-art facility, which incorporates our ASF crystal growth equipment. In their initial production runs, HTOT has successfully grown four high quality boules, all of which were over 100 kilograms.”
Gutierrez continued, “GT has a proven track record of partnering with companies to accelerate their entry into new markets by giving them the tools and support they need to become key industry players. Over the next few months we expect several of our other key sapphire customers in Asia to start producing sapphire and we look forward to working with these customers to ensure their smooth entrance into the sapphire growth industry.”
Within six months, HTOT built a state-of-the- art production facility and is in the process of completing the installation of equipment and ramping to volume production. When the plant is fully operational it will be capable of producing 30,000,000 TIE of sapphire material annually.
As mobile handsets and network infrastructure become more sophisticated, GaAs device usage in these applications is increasing.
This demand is also driving growth in the consumption of GaAs epitaxial wafers that form the basis for these devices. This is according to the recently released Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) Forecast and Outlook, “Markets for SI GaAs Epitaxial Substrates: 2010-2015.”
The report says that demand from commercial and military applications resulted in semi-insulating (SI) GaAs epitaxial substrate demand of slightly more than 29600 ksi (kilo square inches) in 2010. The forecast estimates that growth in GaAs devices will increase the substrate demand to more than 40200 ksi and revenues of $543 million in 2015.
This Strategy Analytics report forecasts that 6-inch GaAs epitaxial substrates will be the most prevalent, accounting for slightly more than 80 percent of total device demand over the forecast period. With cost sensitive, high volume markets dominating the demand for GaAs devices, the report forecasts a compounded average annual growth rate of 9 percent for 6-inch GaAs epitaxial substrate demand.
“Strong growth in the overall GaAs device market in 2010 propelled the GaAs epitaxial substrate market to solid gains in 2010,” noted Eric Higham, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. “The GaAs substrate market is tied closely to wireless communications and Strategy Analytics anticipates continued growth in these areas.”
Asif Anwar, Director in the Strategy Analytics Strategic Technologies Practice added, “We
November/December 2011
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