news digest ♦ RF Electronics
and commercial wireless communications, avionics, radar systems, electronic warfare jammer amplifiers, test equipment and any application in which high power, broad frequency coverage, and high efficiency are critical.
Commercial and defence systems today place stringent demands on RF power devices. They must combine high RF output power with high- efficiency and gain across a wide bandwidth. The T1G6001528-Q3 is fabricated using TriQuint’s proven 0.25-μm GaN on SiC process that is optimised to meet these challenges.
It incorporates advanced field plate techniques that enhance RF output power and efficiency at high drain bias operating conditions. This has significant benefits for system designers because overall costs can be reduced as fewer RF power transistors and amplifiers are required to deliver a specific power level, which can decrease the system’s bill of materials and reduces thermal management requirements.
“Nearly every application today requires RF power devices that are optimised for not just one, but all performance parameters,” said Richard Martin, TriQuint Defence & Aerospace Transistor Marketing Manager. “The T1G6001528-Q3 is an excellent example of how gallium nitride technology can be applied to meet these challenges without trading off a key performance metric just to satisfy another.”
“Compared to even robust technologies like GaAs, GaN provides superior wideband power, efficiency and gain. Our new packaged transistor delivers its 18 Watts output power with extremely high-efficiency, greater than 60% at 6 GHz, while providing the high gain and ruggedness today’s applications require,” he continued.
The T1G6001528-Q3 operates from a 28 VDC power supply, will deliver its rated output power into a 10:1 VSWR without damage, and is housed in TriQuint’s compact, low-thermal resistance earless solder-down package.
T1G6001528-Q3 has a typical linear gain of 10 dB, and drain efficiency >60% at 6 GHz, maximum VSWR of 10:1, from 28 VDC supply.
Samples of the T1G6001528-Q3 and evaluation boards are available now.
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www.compoundsemiconductor.net November/December 2011
SETi grows AlInN materials on bulk GaN substrates
The epitaxially grown aluminium indium nitride technology will allow the firm to further develop next generation high power, very high-frequency RF components.
Sensor Electronic Technology, Inc. (SETi) has announced that it has been awarded an STTR (Small Business Technology Transfer) Phase II program to further develop AlInN/GaN based HFETs on free standing bulk GaN substrates.
The Phase II program was awarded through the Missile Defence Agency (MDA) following successful demonstration of the epitaxial growth of an entirely strain-free HFET structure, comprising of lattice matched AlInN on bulk GaN substrates in the Phase I program. During Phase I, AlInN/ GaN heterostructures were deposited on bulk GaN substrates with Indium compositions ranging from 0-25%, with minimum sheet resistances of ~235 ohm/square.
This new program will target further reductions in defect density in the epitaxial GaN and AlInN layers and demonstrate increased device reliability over conventional AlGaN/GaN HFETs. Increased reliability in GaN HFETs is essential in the defence and satellite markets, which account for over a quarter of the entire GaN RF device market.
SETi, famous for its deep UV LED products UVTOP and UVClean emitting light shorter than 365 nm, is a leader in Al(In)GaN semiconductor material technologies and with its patented process MEMOCVD has a very novel process for defect reduction in AlGaN-based epitaxial structures on sapphire substrates.
SETi says the application of MEMOCVD in UVLED structures enabled it to become the first UV LED company to offer LEDs with wavelengths shorter than 365nm on the commercial market and continues to ensure its lead in this market today.
SETi has now demonstrated the benefits of its Al(In)GaN materials growth technologies on bulk nitride substrates and through further development from programs such as this MDA funded program, will push AlInN material technology further to the
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