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Kyma expands AlN template manufacturing capacity
The firm’s aluminium nitride based templates act as a replacement for bare and patterned sapphire substrates by manufacturers of blue, green, and white LEDs.
Kyma Technologies has expanded its AlN template manufacturing capacity for both sapphire and silicon based AlN template products.
Kyma’s AlN templates are manufactured using its patented plasma vapour deposition of nanocolumns (PVDNC) technology, which provides LED manufacturers with throughput, cost, and performance benefits.
The expansion of Kyma’s AlN PVDNC template manufacturing capacity is based on successful customer qualification of products fabricated in its newest high volume PVDNC reactor, the commissioning of which was announced by the company earlier this year.
LED customer feedback indicates significant improvements in LED brightness, reverse voltage, and electrostatic discharge yield. Similar benefits have been previously verified using Kyma’s lower volume manufacturing tools which the company has used since it was founded in 1998.
Kyma has also qualified the tool for production of PVDNC AlN on silicon wafers. Several customers report improved device properties for both RF and power switching applications.
Kyma says qualification of this new tool was not a small task and that its design is totally new compared to earlier designs, with key design changes targeting improved tool uptime, shorter process cycle time, and better process repeatability and uniformity.
“We are pleased to qualify our new reactor for both sapphire and silicon based PVDNC AlN template products,” said Heather Splawn, Kyma’s Chief Operating Officer. “Doing so represents not only a significant boost to our manufacturing capacity; it also validates our improved tool design approach which should prove beneficial for our continued expansion plans going forward.”
Kyma believes that the market for nitride semiconductor devices is estimated to be $9B in 2011 and is expected to reach $90B over the long term, including $60B in visible lighting applications and $30B in power electronics applications.
GaN-on-Si 48V technology cooler than ever
Enabling more reliable RF power, Nitronex has upgraded its 28V NRF1 gallium nitride on silicon technology.
Nitronex has developed a 48V GaN-on-silicon process platform.
Designated NRF2, this new platform delivers double the power density, 1-2dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation over Nitronex’s 28V NRF1 process technology.
The new technology further increases reliability for GaN-on-silicon, with more than one million hours (114 years) mean time to failure (MTTF) at an operating junction temperature of 230°C using a stringent 10% drift failure criteria. In addition, improvements in thermal management in initial 48V products have demonstrated thermal resistance reduction of more than 40% compared to existing Nitronex products.
The NRF2 process platform heavily leverages Nitronex’s existing NRF1 platform which has been used to ship more than 500,000 production devices (including more than 50,000 MMICs) since volume shipments began in 2009.
“A robust and reliable high voltage process can deliver superior performance in high-power RF applications. We have developed several semi- custom products for customers with high volume applications using the NRF2 48V technology, and our customers are very pleased with our solution versus alternatives,” said Ray Crampton, VP of Engineering. “In addition to increased reliability and RF performance, we have demonstrated robustness to 15:1 output VSWR at all angles at 90°C flange temperature under saturated drive conditions.”
Nitronex says its patented SIGANTIC GaN-on- November/December 2011
www.compoundsemiconductor.net 211
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