This page contains a Flash digital edition of a book.
conference report  advances in photovoltaics


goal for this team is the optimisation of epitaxial germanium-on-silicon substrates for stacked junction growth. And they are also working on the development of hot carrier cells, in which slower thermal relaxation at the band edge is controlled by manipulation of the lattice’s phononic properties, again using quantum dots.


Thinning silicon to cut costs Cigang Xu from Oxford Instruments talked about the trend for reducing the quantity of silicon in devices by simply thinning wafers to 100-150 µm whilst maintaining their thermal and ultraviolet stability and passivation properties. He described the progress made in a European-funded project focused on developing aluminium oxide deposition for the rear side of cells using plasma-enhanced CVD (a technique that offers clear routes to industrial scale-up). This process has great potential for precise growth control: Precursor supply (trimethlyl aluminium and nitrous oxide), RF power, pressure, flow rates, and temperature are all available parameters that can be used for optimisation, whilst monitoring plasma conditions. According to Xu, ultimately it’s necessary to find an appropriate balance between growth rates, precursor usage, uniformity, and film properties.


The fast-food outlet Burger King is installing CdTe-based photovoltaics systems


Transfer of a research project in thin-film devices at Colorado State University to the production line were described by Kurt Barth of Abound Solar. The result is a rugged CdTe PV module that is now being fabricated on a commercial scale. A first-generation tool was built in 2009, and just 19 months later the first modules were coming off the production line. Barth revealed that manufacturability has been a key driver at all stages of development. He said that the resultant product is robust, utilising a unique encapsulation design with an edge seal enclosing internal dessicators. This results in impressive long-term performance, with tests revealing that devices maintained high performance at 85 °C and 85 percent humidity for well in excess of the 1000 hours required for certification.


At Abound automated cell manufacture takes about two- and-a-half hours from start to finish. Glass is loaded and a laser scribes grooves into this substrate, before a proprietary method based on thermal sublimation


deposits a CdTe-based film. Metal sputtering to add back contacts follows, and finally the cell is encapsulated.


According to Barth, Abound will be producing 70,000 modules per month by Fall 2012. Production yield already exceeds 80 percent and total area efficiency is up to 10 percent – further improvements are expected through fine tuning of thickness and processing. The Colorado-based CdTe outfit also has plans to ramp its manufacturing capacity. Construction of a second production line with 65 MW capacity is underway and a third is planned that should lead to a 170 MW capacity by 2012. A new facility with 10 lines is also in the pipeline, and Barth says this should enable Abound to expand its manufacturing capacity to 1500 MW by 2014.


Another speaker talking about commercial drivers for cost reduction and improved capability was Stuart Irvine, who is the Director of the Centre for Solar energy Research at Optic Technium and an academic at Glyndwr University. According to Irvine, although thin- film technology actually offers only a slight cost reduction compared to silicon at this stage, it has great potential to become far cheaper. That’s because thin- film technology is relatively new, so it is only now growing in maturity, with high-volume manufacture leading to economies of scale. Irvine argued that it’s still a close race between these PV rivals, and he predicted that thin-film technology would represent about a quarter of the PV market by 2013.


Irvine went on to point out some of the materials challenges for thin-film PV: An increased conversion efficiency; reductions in the cost and amount of semiconductor material used; and the development of cheaper, lower-energy processing methods, with high throughput. He also pointed out that there are issues of durability and product lifetime. One option for trimming costs is to use ultra-thin films. However, models of the costing breakdown that have been produced by the UK PV Supergen consortium illustrate that the relatively small materials component of total production costs doesn’t justify this switch right now. The situation could change, however, given the uncertainty surrounding future materials prices – tellurium prices are critical.


Another topic discussed by Irvine was CdS deposition on windows by atmospheric pressure MOCVD at growth temperatures of 200-450 °C. This involved the addition of zinc to increase transmission. He and his co-workers are also looking at device efficiency at various film thicknesses and trying to determine how thin a film can be whilst maintaining its properties. It’s not simply absorption that must be considered, explained Irvine – there are other effects to take into account in cells that are just a few microns across. To thoroughly investigate this topic, the team have turned to micro-light beam induced current mapping, a technique that can nicely illustrate issues relating to uniformity and pin-holes, with


48 www.compoundsemiconductor.net November/December 2011


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255