news digest ♦ Solar
• Large diameter GaN-on-Si epiwafers for power electronics –Dr Mariane Germain, EpiGaN
•Gallium nitride from both a product perspective and foundry - Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor
•Damage - free Deposition on LED devices –Dr Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd
•Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr Thomas Uhrmann, Business Development Manager, EV Group (EVG)
SemiSouth SiC JFETs raise the bar for output power density
The firm’s silicon carbide power modules, featuring a compact, optimised cooling system, can operate at up to 2000C and achieve 30kW/l performance.
SemiSouth Laboratories has announced that its SiC JFETs are being used in small 0.5 litre inverters to achieve an output power density of 30kWh/l. It is claimed that if inverters of this size and capacity are used with PV panels, one inverter could supply enough electricity for up to five households.
operate at high temperature with high output power density.
Using SiC JFETs from SemiSouth Labs, the team developed a three-phase 500cc inverter that delivers 15kW output power when connected to a three-phase motor with a conversion efficiency of 99%. Featuring a compact, optimised cooling system, it has been claimed the power modules can operate at up to 2000C. “We believe this is the world’s highest output power density for a small- volume inverter,” said Satoshi Tanimoto, chief researcher at FUPET’s R&D Centre. “SemiSouth’s JFETs have been instrumental in helping us maximise efficiency and power density.”
SemiSouth’s JFETs are compatible with standard gate driver ICs, and feature a positive temperature coefficient for ease of paralleling; extremely fast switching with no ‘tail’ current at up to a maximum operating temperature of 1500C and a low RDS(on) max. Devices are available in TO-247 packaging and in some cases they are also available in die form for integration into modules.
Jeff Casady, President and CTO, commented, “The FUPET team achieved these results at 50 kHz which is their minimum frequency target, and the module also has a very low inductance module with only 5 nH. It is exciting to see the results that can be achieved using our technology.” The FUPET team aims to achieve an inverter with 40kW/l output power density next year.
GaN Systems closes Series A financing round in Canada
The transaction marks an end to the dry period of venture deals in the Ottawa region & sets the gallium nitride product manufacturer on a path to attack the $14 billion-a-year power devices market.
A team at the Japanese academia and industry R&D Partnership for Future Power Electronics Technology (FUPET), consisting of participants from Fuji Electric, Nissan Motor, Sanken Electric and Toshiba, aims to deliver power converters that
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www.compoundsemiconductor.net November/December 2011
GaN Systems, a provider of next generation power conversion semiconductors for cleantech applications, has announced the closing of its Series A financing round led by Chrysalix Energy Venture Capital and Rockport Capital.
Chrysalix Energy Venture Capital, was one of the world’s most active cleantech venture capital firms in 2010. Rockport Capital is a venture capital firm
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