LEDs ♦ news digest
The GENxplor can create high quality epitaxial layers on substrates up to 3” in diameter and is ideal for cutting edge research on a wide variety of materials including GaAs, nitrides, and oxides.
from a compact 4.4mm x 4.4mm footprint, one of the industry’s smallest high power UV LED packages. It has a narrow beam angle of 70° that results in more flux in the beam and maximum power density (W/cm2) on target, at least four times higher than its closest competitor.
Latest GENxplor R&D MBE System
“The compound semiconductor R&D community asked for a more affordable, flexible, and easy-to-use MBE system and Veeco has delivered with the GENxplor,” says Jim Northup, Veeco’s Vice President and General Manager. “We have repackaged Veeco’s industry-leading MBE technology into a novel ‘all-in-one’ design that combines the reactor and electronics on a single frame. It will change the way researchers use MBE.”
The GENxplor uses Veeco’s GEN10 growth chamber design and features process flexibility, ideal for materials research on emerging technologies such as UV LEDs, high-efficiency solar cells, and high-temperature superconductors.
Its efficient single frame design combines all vacuum hardware with on-board electronics to make it up to 40 percent smaller than other MBE systems, saving valuable lab space. And as the manual system is integrated on a single frame, installation time is reduced.
Veeco says the open architecture design of the GENxplor also improves ease-of-use and provides convenient access to effusion cells. And it also allows easier serviceability when compared to other MBE systems. When coupled with Veeco’s recently introduced retractable sources, the system is ideally suited to oxide materials research.
LZ1-00UV00 LED
Due to its small size and high irradiance, the robust emitter offers unparalleled flux density for system developers of fast curing inks, adhesives and coatings. What’s more, medical, sterilisation, currency verification, forensic and contamination inspection applications benefit from system efficiencies and cost savings driven by smaller emitters and optics.
The Gen 2 emitter, based on LED Engin’s proprietary LuxiGen platform, delivers a combination of low thermal resistance (4.2°C/W) and an improved thermal derating, producing 80 percent relative flux at 100°C case temperature. This enables it to be driven at high drive currents (nominal 700mA) and high junction temperatures (maximum 130°C). The result is sustained maximum flux performance for high temperature applications that allows system designers to employ a smaller heat sink with passive cooling.
President and CEO of LED Engin, David Tahmassebi, comments, “We are proud to have made such a pioneering breakthrough in UV LED technology. Our latest high flux density emitter will deliver new capabilities to UV curing applications, particularly in areas where it is vital to produce and maintain maximum levels of performance. Those customers that have been waiting for dramatic progress in flux density will be very pleased with what LED Engin can offer.”
LED Engin’s 365nm emitter
breaks barriers The firm’s III-nitride based UV LED Gen 2 emitters are claimed to deliver class-leading irradiance in demanding curing applications
LED Engin has launched a 365nm UV LED Gen 2 emitter that delivers up to 1000mW flux output at 2.8W power - claimed to be the highest radiant flux available in the market from a single die package.
The 365nm Gen 2 LZ1-00UV00 emitter produces its irradiance August/September 2013
www.compoundsemiconductor.net 71
The 365nm UV LED Gen 2 emitter (Part number: LZ1-00UV00) is available now from LED Engin and its distributors.
Cree not a casualty in financial crisis
The LED and SiC power device chip manufacturer has shown robust growth over the last fiscal year
Cree announced revenue of $375.0 million for its fourth quarter of fiscal 2013, ended June 30th, 2013.
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