This page contains a Flash digital edition of a book.
Equipment and Materials ♦ news digest


WaferStorm TSV CLEANER


TSV clean is a critical process step that is essential to reliability. The deep reactive ion etch (DRIE) process leaves behind a polymer residue which can lead to defects and voids in the barrier, seed, and fill steps that follow. SSEC’s WaferStorm TSV CLEANER is proven to remove residues in high-aspect-ratio holes that wet bench-only or spray-only tools leave behind. The tool features equal-time soak software for process control.


WaferStorm DRY FILM REMOVER


Removal of dry film resists used in advanced microbumping processes for 3D ICs and wafer level packaging (WLP) applications is a challenge due to the film thickness and composition. The SSEC WaferStorm DRY FILM REMOVER combines heated chemistries and proprietary soak and spray at high pressure for rapid and complete removal of stubborn dry film residue.


The soak step uses heated solvents throughout the buffer cycle time. After being softened by the soak, the wafers are transferred to the single-wafer spray station where they are exposed to high-pressure fan sprays with heated solvents for rapid removal of dry film residue. This combination ensures thorough removal and increased throughput.


SEMATECH & Air Products


unite to advance III-Vs Air Products will collaborate with SEMATECH’s engineers to better understand the underlying principles responsible for the deposition of III-V structures


WaferStorm METAL LIFTER


Metal lift-off consists of the sequential steps of photolithography, metal deposition, and solvent lift-off of both metal and non-metal substances in MEMS and compound semiconductor applications. The SSEC WaferStorm METAL LIFTER is configured specifically to perform the sequential soak and spray combinations unique to the process.


The immersion station operates in a low-oxygen atmosphere, which maintains the bath longer. Following a soak in the immersion tank, lift-off takes place in a spray station using a high-pressure chemical spray, which translates to increased throughput. The tool features a lift-off material filtration station and strainers for separating metal films, which results in the complete removal of the metal.


Air Products, a global provider of industrial gases, used in MOCVD growth, has joined SEMATECH’s Front End Processes (FEP) program.


Air Products will work with SEMATECH to assess advanced materials and technologies for the development of sub-10 nm node III-V devices.


Continued scaling will require the use of new materials and chemistries to keep pace with the International Technology Roadmap for Semiconductors (ITRS). For example, III-V channels offer significant power and performance benefits, such as higher mobility, enhanced drive current and supply voltage scaling which enable continued device scaling and performance improvement.


As a member of this program, located at SUNY’s College of Nanoscale Science and Engineering (CNSE), Air Products will


August/September 2013 www.compoundsemiconductor.net 169


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178
Produced with Yudu - www.yudu.com