LEDs ♦ news digest
Aixtron says Air Water selected this MOCVD system to deliver superior material uniformity, a key factor in demonstrating the advantage of Air Water substrates for GaN epitaxy.
Following the installation, the company has announced the release of GaN-on-SiC on silicon substrates for this year.
In order to address future market demand, Air Water is also considering upgrading the system to an Aixtron AIX G5+, which can handle up to 5 x 200 mm (8 inch) silicon substrates.
As compared to traditional silicon substrates, the additional SiC layer displays the advantage of protecting the silicon substrate in the initial GaN nucleation process. Due to its crystal structure SiC is considered as an ideal template for the GaN growth.
So, the SiC-on-silicon substrate is enabling the growth of superior crystal quality GaN layers onto large areas. This characteristic brings efficiency and cost savings to a wide range of high-power and LED applications.
Air Water is a Japanese industrial gas manufacturer and has developed SiC growth on silicon for both power device and LED applications as part of the semiconductor gas business.
The company has already succeeded in the production of high quality 3C-SiC (111) on up to 8 inch silicon substrates and has also announced the release of these products for GaN epitaxial growth required to manufacture electronic devices for LED and power electronic applications.
Power Integrations & Cree launch reference design for LED spotlight
The DER-350 is claimed to achieve excellent dimming performance for all TRIAC dimmer types
Power Integrations has announced a reference design for a dimmable PAR38 spotlight, developed in collaboration with LED lighting company Cree.
The new reference design, described in DER-350, uses Power Integrations’ new LYT4317E, a member of the company’s LYTSwitchTM-4 family of single-stage drivers, along with Cree’s MT-G2 EasyWhite® LEDs.
DER-350 includes an isolated, high-power-factor, TRIAC- dimmable LED driver optimized to deliver an LED current of 550 mA at 36 V (nominal) from an input voltage range of 90 VAC to 132 VAC. The combined PFC and CC single-stage, isolated topology of the LYTSwitchTM-4 IC delivers excellent efficiency, power factor of 0.98, and low component count. Over-voltage, overcurrent and over-temperature protection features are built-in.
DER-350 also showcases the LYTSwitch-4 IC’s excellent TRIAC dimming with very fast sub-200 ms start-up, reduced pop-on and no dead-travel, easily satisfying NEMA dimming curve requirements, for both leading-edge and trailing-edge
dimmers.
Co Andrew Smith, product marketing manager at Power Integrations comments, “The combination of the high lumen output, excellent optical control and color consistency of Cree’s MT-G2 EasyWhite LEDs makes it ideal for directional luminaires such as the PAR38 replacement lamp.”
Adds David Cox, Cree’s director of alliance development, “Power Integrations’ low-cost, high-efficiency drivers complement our LEDs and facilitate designs that are compact, require little heatsinking and provide excellent dimmability. The result is LED-lighting solutions that are being readily accepted by customers.”
Azzurro’s GaN-on-Si LED wafer achieves 1nm standard
deviation The firm’s subsidiary announced the news during a talk at ICNS yesterday
While showing production values of less than 3 nm wavelength uniformity, Azzurro’s 1.0 nm result came straight from development.
This latest result demonstrates the capability to achieve 1 nm (or 1 bin) GaN-on-silicon LED uniformity.
GaN-on-silicon contenders have always found that the yield question has remained open. The large mismatch of crystal lattice structure and thermal expansion coefficient cause highly bowed LED wafers after and during growth.
This in turn has a very big negative impact on uniformity levels for wavelength, forward voltage and output power. Azzurro uses its proprietary and patented strain-engineering and growth technologies to overcome these obstacles.
Breakthrough uniformity from production for wavelength (less than 3 nm or 0.6 percent), forward voltage (1.3 percent) and output power (3.9 percent) for highly reduced binning were presented at the ICNS-10 in Washington D.C., USA together with excellent crystal quality values for 150 mm blue emission GaN-on-silicon LED wafers (all values are standard deviation).
At the same time equally impressive values for 200 mm LED wafers show Azzurro’s technological scalability. Manufacturability parameters like low bow (less than 20 µm) and thickness uniformities (1.7 percent) are not compromised on.
August/September 2013
www.compoundsemiconductor.net 67
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