news digest ♦ LEDs
Based on these achievements the technical team continues to push for the ultimate “1 bin” wafer aim and demonstrated the benchmark result for wavelength with only 1.0 nm uniformity and a min/max value of 5 nm (one wavelength bin). This is illustrated in the map below.
ICA 1204 laser dicing system
The ICA1204 system is equipped with a specific UV laser and ALSI’s unique multi-beam laser splitting technology.
The overall process is based on a high speed full cut laser dicing process for wafers in the range of 150-200µm thick. Due to the specific nature of the applied coating, additional special coating process units were integrated into the system.
Azzurro’s latest results from production and development indicate that in addition to the cost advantages from lower cost substrates and by using standard silicon fabs for LED chip processing GaN-on-silicon LED wafers with the right strain-engineering technology can also help reduce binning dramatically.
Azzurro’s co-founder and CMO, Alexander Loesing, who is also heading its LED Technologies business unit, comments on the results, “We are very proud of our team’s record 1.0 nm achievement. With these results we show that our GaN-on- Si technology can bring the LED industry closer to the aim of making “1 bin” LED wafers.”
Azzurro specialises in the growth of GaN on silicon substrates. The company manufactures epitaxial wafers for LED and power semiconductor applications.
Major LED manufacturer finds ALSI’s dicing system cutting edge
The tool will be used in the manufacture of GaN and GaP LEDs
Advanced Laser Separation International (ALSI) N.V. introduced its new laser dicing system, the ICA 1204 for GaN and GaP devices, at one of the world’s largest major LED manufacturers with great success.
As a result, this new system outperformed ALSI’s previous models and a competitors system with significant results. The total cycle time including the specific coating process, multi-beam dicing and wafer cleaning, which are completely integrated in the system, was reduced by almost a factor two.
Since all the process steps are integrated inside the system, the operator cost and handling cost are reduced as well. ALSI says this combination of faster cycle time, reduced handling time, and fast dicing process, also reduced the overall cost per wafer by a factor 2.
The multi-beam process is based on 10-14 beams which achieves a very high dicing speed and a fast process time, while creating an extremely narrow kerf giving superior dicing quality.
This new process and system has been tested by customers resulting in firm orders and is used in full production.
Opto Diodes’ AlGaAs 850nm
LED boosts optical output A new gallium aluminium arsenide night vision device may improve illumination tasks
Suited for night vision illumination tasks, Opto Diodes’, OD-669- 850 infrared LED illuminator produces uniform optical beam and has optical output from 800 to 1,250 mW (typ) and a peak emission wavelength of 850nm.
Spectral bandwidth at 50 percent is typically 40nm, and half-intensity beam angle is 120°. All surfaces on standard
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www.compoundsemiconductor.net August/September 2013
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