news digest ♦ Power Electronics
device is helping us to continue developing more-reliable products, which our customers expect from us.”
Since 1959, Netherlands-based Delta Elektronika BV has been a leader in producing highly reliable, high-quality power supplies for a range of industrial applications, such as specialised equipment used in factories, automation and industrial power conversion.
Larry Spaziani, VP, Product Management, GaN Systems
GaN Systems develops and manufactures GaN transistors targeted at efficient power conversion for solar, wind and smart-grid, electric and hybrid vehicles and high-efficiency power supply applications. Spaziani will head up GaN Systems’ product team and be responsible for driving forward acceptance of GaN Systems’ unique technology.
Comments Girvan Patterson, CEO of GaN Systems, “We are delighted to welcome Larry on board. Larry’s experience in technical development and successful track record in marketing and new product launches will drive this important growth phase for our breakthrough device designs in gallium nitride high power transistors. ”
Spaziani joins GaN Systems from International Rectifier, where he was Executive Director, Enterprise Power Business Development, responsible for managing its new product development team and forging relationships with external business partners and technology leaders. Prior to IR, he was VP Marketing and Business Development at CHiL Semiconductor, where he managed the Applications and FAE teams and oversaw 43 new product launches in three years.
Spaziani’s strong track record at executive level in the semiconductor industry also includes senior positions at Unitrode and Texas Instruments, where he was responsible for off-line and isolated power products. Spaziani has lived and worked both in the USA and Europe and holds an MSEE from Boston University.
Cree SiC MOSFETs halve the component count
Delta Elektronika demonstrated a 21 percent decrease in overall silicon carbide power-supply losses
Cree has announced that its newly expanded portfolio of 1200-V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika BV.
Delta Elektronika demonstrated a 21 percent decrease in overall power-supply losses and a reduction in component count by up to 45 percent when compared to power-supply products using traditional silicon technology.
“We are delighted to use Cree’s new SiC transistor in our product series, as it improves both the efficiency and power density of our products,” says Job Koopmann, director of Delta Elektronika BV. “The switching behaviour is outstanding, and controlling the MOSFET is simple and straightforward. This
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www.compoundsemiconductor.net August/September 2013
Its power supplies typically provide high efficiency with low noise levels and are well known for their long operating lifespan. By implementing Cree’s advanced second-generation SiC MOSFETs in its latest power supply series, Delta Elektronika BV is leading the industry in the deployment and delivery of highly reliable advanced technology.
“We are pleased to have Delta Elektronika BV as one of the volume adopters of our newest generation of SiC MOSFETs,” comments Cengiz Balkas, general manager, Cree Power and RF. “Delta Elektronika BV has a half-century legacy of producing some of the most-reliable, efficient and compact power supplies on the market. The industrial power-supply market, which values efficiency, reliability and power density, is a key market for SiC MOSFET technology. Our new, second- generation SiC MOSFET portfolio, which now includes a 160- mOhm MOSFET for the 5 to 10kW market, is receiving strong market pull.”
Introduced in March 2013, Cree’s second-generation SiC MOSFETs have been well received throughout the power industry and are experiencing an increasing rate of adoption in several key applications, including a design-in in a major manufacturer’s next-generation, highly efficient PV inverters.
With SiC, power-supply manufacturers are able to reduce their component count to help improve reliability while maintaining or improving the power supply’s efficiency. Improving power density can also lead to reductions in the size, weight, volume and, in some cases, even the cost of power supplies. SiC has been demonstrated to achieve more than twice the power density of typical silicon technology in standard power-supply designs.
Packaged SiC MOSFETs from Cree are available from DigiKey, Farnell/Newark, Richardson and Mouser, and die are available from SemiDice.
Fujitsu to power ahead with
GaN-on-Si chip shipments The firm’s gallium nitride device enables smaller, more efficient power supply products for use in telecommunications, industrial equipment, automotive, and other applications
Fujitsu Semiconductor Limited (Fujitsu) has released the MB51T008A, a silicon substrate-based GaN power device that has a breakdown voltage of 150 V.
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