news digest ♦ RF Electronics
Anadigics’ InGaP PA awarded 2012 ACE award from China
The firm’s ALT6738 HELP4 power amplifier, which features the firm’s indium gallium phosphide technology, was selected as RF/Wireless Product of the Year
Anadigics has received the 2012 China Annual Creativity in Electronics (ACE) Award, presented during a reception held in conjunction with the 17th International IC-China Conference & Exhibition(IIC- China).
The company received the 2012 China ACE RF/ Wireless Product of the Year Award for the ALT6738 fourth generation High-Efficiency-at-Low-Power (HELP4)power amplifier (PA).
The China ACE RF/Wireless Product of the Year Award recognises solutions that offer significant design and technical benefits, provide engineers new and compelling capabilities, and deliver significant resource savings, including time, cost, and space. The award also acknowledges products that are likely to have a significant impact in mainland China.
“Anadigics is honoured to be recognised by both the editors and readers of Global Sources China” said Jerry Miller, vice president of business development and marketing at Anadigics. “By combining technological prowess with innovative designs, our HELP4 power amplifiers continue to set the standard for RF efficiency. This level of performance helps designers and manufacturers deliver mobile devices with greater battery-life without the additional system cost of a DC-DC converter.”
Anadigics’ ALT6738 HELP4 power amplifiers use the Company’s exclusive InGaP-Plus technology to achieve optimal efficiency across low-range and mid-range output power levels with thelowest quiescent current. These power amplifiers extend battery life in handsets, smart phones, tablets, netbooks, and notebooks.
The company’s HELP4 PAs offer an average current consumption reduction of 30%, compared with previous generation PAs. The devices have three mode states to achieve exceptional power- added efficiencies at low-range and mid-range
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www.compoundsemiconductor.net March 2012
output power levels and a quiescent current of less than 4 mA.
The highly integrated modules and are claimed to have best-in-class linearity at maximum output power and feature internal voltage regulation. With an integrated “daisy chainable” directional RF coupler with 20dB directivity, they come in a 3 mm by 3 mm package.
RFMD reveals new 3G/4G antenna control solutions
The designer and manufacturer of high- performance RF components and compound semiconductor technologies is broadening its portfolio
The high-performance antenna control products are optimised to solve the complex RF requirements of 3G/4G smartphones related to high band count and signal integrity in an extremely compact form factor.
Eric Creviston, president of RFMD’s Cellular Products Group, said, “RFMD’s antenna control solutions are securing key design activity at leading smartphone manufacturers by solving the increasingly complex challenges in multimode, multi-band front ends. By optimising antenna performance across modes and bands, RFMD’s antenna control solutions improve call quality, extend battery life and enhance the smartphone consumer experience. We expect RFMD’s 3G/4G antenna control solutions will begin to achieve broad customer adoption this calendar year.”
RFMD’s new antenna control solutions expand the Company’s switch and signal conditioning product portfolio, which also includes antenna switch modules, switch filter modules, switch duplexer modules, RF power management components, and low noise amplifiers. The product portfolio has grown rapidly since its launch, with more than $25 million in sales in the December 2011 quarter.
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