Telecoms ♦ news digest
HRL has been investing in GaN transistor development since the late 1990s, reporting the first Ka-band GaN power amplifier at the 2004 IEEE International Microwave Symposium and the first W-band GaN power amplifier at the 2006 International Electron Devices Meeting.
The HRL GaN amplifiers offer more than five times improvement in E and W-band output power compared to current state-of-the-art commercial solid-state technologies. This high power output reduces the need for power combining multiple amplifiers and minimises the power module assembly complexity. What’s more, the intrinsic higher linearity of GaN allows the transmission of modulation schemes with higher spectral efficiency, increasing the potential data throughput for wireless links.
HRL is offering wideband 70 to 100 GHz GaN power amplifiers as well as a family of application- specific E and W-band power amplifiers covering the 71 to 76 GHz, 81 to 86 GHz and 90 to 96 GHz bands.
HRL will be showcasing its GaN products at the 2012 GomacTech conference (Booth # 305) taking place from March 19-22, 2012 in Las Vegas, Nevada. The company will also exhibit its GaN products at the International Microwave Symposium (Booth # 203) from June 17-22 in Montréal, Canada.
HRL Laboratories, LLC, Malibu, California is a corporate research-and-development laboratory owned by The Boeing Company and General Motors. It specialises in research into sensors and materials, information and systems sciences, applied electromagnetics, and microelectronics. HRL provides custom research and development and performs additional R&D contract services for its LLC member companies, the U.S. government, and other commercial companies.
Infinera ranked number one in 2011 North American long haul WDM market
The indium phosphide PIC provider held the number one market share position in this sector
According to ACG Research, a market analysis firm delivering telecom market share and forecast reports globally, the global Long Haul WDM market increased 15% in 2011 from 2010.
The North American Long Haul WDM saw a healthy increase of 9.1% quarter over quarter in 2011. In fourth quarter 2011 alone, the overall worldwide Long Haul WDM market was up 20% from its previous quarter, exemplifying a strong growth in this market.
“Our reports indicate the Long Haul market is experiencing another growing cycle and we expect this market to continue to expand over a couple of years,” said Eve Griliches, Principal Analyst at ACG Research. “Infinera is well positioned to sustain its number one rank in this market, especially with the Infinera DTN-X platform coming to the market.”
In 2011, Infinera experienced growth globally, adding 16 new customers for a total of 98 customers worldwide during this period. In addition to new customers, Infinera’s customers purchased multiple products across multiple applications.
“We are pleased to see further evidence validating Infinera’s strategy of focusing on our customers’ success,” said Tom Fallon, Infinera CEO. “Infinera’s Digital Optical Network solution enables multi- Terabit optical networks solutions that are simple, scalable and efficient. These results reflect the trust our customers continue to place in us.”
New promise for gallium manganese arsenide in spintronics
The material properties, which arise from holes in an impurity band, created by manganese doping, depletes the valence band and shifts the Fermi level . This should enable a boost in the materials’ spintronics performance
Scientists say they have solved a long-standing controversy regarding gallium manganese arsenide ((Ga,Mn)As)), a material which shows great potential for spintronic applications.
Researchers at the U.S. DOE’s Lawrence Berkeley March 2012
www.compoundsemiconductor.net 77
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136