Power Electronics ♦ news digest SJDP120R340 JFET
Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C.
SSJHB12R085-1
Normally-on SJDP120R085 1200 V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling. The JFETs have a high saturation current (27 A), low on-resistance per unit area (85 mΩ max), and improved switching performance.
The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits. Dieter Liesabeths, VP of Sales and Marketing, comments, “Our SiC JFETs have industry-leading performance and we are committed to supporting them with the best available design tools.”
Normally-On SiC JFETs with ultra low switching losses
Key applications of the silicon carbide power devices include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating
SemiSouth Laboratories is launching the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.
Dieter Liesabeths, SemiSouth’s Director of Sales, explains, “Because of the small die size and our compact device design, the new SJDP120R340 normally on SiC trench JFETs are very cost- effective. Samples are available today; with volume production set to begin in Q2 2012 with pricing below $7 in quantities of 1000.”
Cree spices up support of SiC power MOSFET design
The behaviour-based model enables power electronic design engineers to quantify the benefits of silicon carbide MOSFETs in board-level circuit simulation
Cree has expanded its design-in support for one of the industry’s first commercially available SiC MOSFET power devices with a fully-qualified SPICE model.
Cree Z-FET 1200V SiC MOSFET
Using the new SPICE model, circuit designers can easily evaluate the benefits Cree’s SiC Z-FET MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.
SiC MOSFETs havevery different characteristics March 2012
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