CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY Volume 18 Number 2
contents industry & technology
14 20 26 33 38
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news
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SiC LED performance Flat reveues for GaAs
Solar panel improves efficiency rating
GaN-on-silicon manufacturing process takes off
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GaN device is 99 percent efficient
Leasing MOCVD tools CIGS panels set a new benchmark for efficiency
GaAs solar cells for space hit new milestone
09 12 March 2012
www.compoundsemiconductor.net 5 06 08
Widespread GaN deployment EpiGaN’s founders discuss how excellent passivation on larger wafers will help to drive the growth of the power electronics industry
Issuing a red alert for LED lighting Breaking the 200 lm/W barrier for red LEDs will not only aid car brake lights: It will also improve the lighting of greenhouses and enhance the performance of pico-projectors
Connecting wireless and optical networks Ultra-fast photodiodes could be the key component in future wireless networks.One way to reach these fast speeds is to insert a p-type charge layer inside the collector
High-temperature hope Replacing silicon with SiC transistors enables a big enough increase in the electronics’ operating temperature to eliminate bulky thermal management systems
Lighting options Epistar is targeting the retrofit LED light bulb market with novel warm-white LED chipsets operating at high voltages
Amplified harmony The impact of harmonic signals on the efficiency of power amplifiers is often ignored. But these higher harmonics can be exposed and used to boost amplifier efficiency, thanks to a new measurement technique
Research Review Foundry unites GaN and silicon II-VI green-emitting lasers Getting to grips with HEMT degradation
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