EpiGaN provides GaN epitaxial material solutions for electronics applications
• On Si and SiC substrates • Wafers from 3” up to 6” diameter, 200 mm in development • InAlGaN heterostructures • With unique in-situ SiN passivation technology • Customised epi design • Proven results in power switching (600V and above) • Proven results in RF power (up to 100GHz)