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an input signal of 30 GHz, the HMC1084LC4 exhibits 11 dB return loss, 26 dB isolation and only 2.8 dB insertion loss.


What’s more, the HMC1084LC4 SP4T switch is capable of handling high power levels in excess of +27 dBm, that make it ideal for a wide range of applications including telecom infrastructure, sensors, microwave radio, SATCOM, antenna arrays and test instrumentation.


Housed in a compact leadless 4x4 mm ceramic SMT package and compatible with surface mount manufacturing techniques, the HMC1084LC4 SP4T switch complements Hittite’s extensive line of single, double and multi-throw MMIC switches with frequency coverage from DC to 86 GHz.


Samples are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order.


BinOptics’ InP laser technology gives more than Moore


The new technology helps overcome cost, yield and performance barriers associated with sources for silicon photonics


BinOptics Corporation, a manufacturer and supplier of semiconductor lasers has successfully incorporated its patented Etched Facet Technology (EFT) into a variety of silicon photonic applications.


Creating InP based lasers and other photonic components using EFT, opposed to the conventional cleaving process, improves performance, reproducibility, reliability and quality while maintaining affordable manufacturing costs.


Silicon photonics has emerged as a key technology to keep Moore’s Law intact for computing in the march towards exaflop (a quintillion or 1018 mathematical operations per second) computing.


Similarly, advances in Datacom infrastructure in recent years have further necessitated cost-effective, highly reliable lasers capable of supporting next-gen high- speed information transfer.


An efficient, reliable, and non-hermetic photonic source is required to provide infrared radiation to silicon photonics circuits.


BinOptics has fabricated semiconductor lasers and


other photonic elements on InP that meet these specific requirements.


EFT was first conceived and co-invented by the CEO of BinOptics, Alex Behfar, while pursuing a PhD at Cornell’s School of Electrical and Computer Engineering. Since Behfar co-founded BinOptics in 2000, EFT has been utilised in the manufacturing of more than 40 million lasers shipped.


“Our customers have experienced the benefits of our EFT produced lasers for a long time and across a wide variety of applications, but only recently have they been aggressively exploring the unique benefits of our EFT offerings in silicon photonics applications,” says Behfar. “EFT is solving a new set of unique challenges as organisations look for solutions to enable the next generation of computing. Many industry experts expect chip-to-chip and on-chip photonics to be the most significant technology impacting the future of computing.”


Challenges with reproduction, flexibility, integration, and performance using conventional cleaving processes drive up cost and threaten the sustainability of continuous improvement. The BinOptics EFT design philosophy eliminates those barriers, helping support the rapid advancement of silicon photonics.


Attributes of the technology are listed below.


Reproducibility and Flexibility: EFT allows facets to be defined through high precision photolithography rather than imprecise cleaving. The result is unprecedented uniformity and yield, as well as the capability to build structures that are impossible to realise with conventional techniques. With no dependency on the crystallographic plane of the wafer, unique anti-reflection geometries can be used in place of expensive coatings.


High Yield: Facet cleaving and bar testing is often one of the most costly operations in other factories. BinOptics’ lasers are fully fabricated with EFT and automatically tested on the wafer before separation into individual chips. As a result, BinOptics is able to fully evaluate all the lasers on the wafer in an automated, high-throughput test operation, in addition to dramatically reducing the cost of chip handling.


Surface Emission: The BinOptics’ technology platform enables etching of angled facets that allow the light from a laser to emerge perpendicular, or at an angle off from perpendicular, to the surface of the InP chip. This is particularly helpful with coupling to grating couplers on silicon photonic chips.


Performance and Reliability: Facet cleaving operation and subsequent coating operations can cause failures and performance issues due to the disruptive nature


October 2013 www.compoundsemiconductor.net 91


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