This page contains a Flash digital edition of a book.
LEDs ♦ news digest


this small size with such a high level of performance,” says Luke Thorkildsen, director of lighting division, The Coleman Company, Inc. “We’re excited about the new possibilities for smaller, lighter or brighter designs enabled by the new XQ-E LED.”


The new XQ-E LEDs have a tiny 1.6 mm x 1.6 mm footprint and are available in both white and colour configurations. The XQ-E’s combination of optical symmetry, consistent design across all configurations and its small size enables improved colour mixing and optical control compared to the larger XP-E2 LED.


“Previously, the size of LEDs dictated the form factor of the luminaire and lighting manufacturers had to design around the light source,” explains Paul Thieken, director of LED Components, Cree. “With its unparalleled performance and size, the XQ-E LED redefines what’s possible with lighting designs, enabling new form factors and eliminating constraints.”


Built on Cree’s revolutionary SC3 Technology Platform and characterised at 85°C, the XQ-E White LED is available in 2700-K to 6200-K colour temperatures and offers minimum CRI options of 70 and 80. The XQ-E White LED delivers up to 287 lumens at 3 W, 85°C. XQ-E Colour LEDs are available in red, green and blue.


Cree XLamp XQ-E White LED samples are available now, and colour LED samples will be available in late October. Production quantities are available with standard lead times.


Nitride Solutions ships first AT-50 AlN templates


The aluminium nitride templates, produced using HVPE, have been sold to a major Asian LED manufacturer


template properties far superior to any presented before. This data accelerated requests for sampling by major manufacturers of LEDs and power-switching devices.


“Our templates are by far the best in the market, and our manufacturing processes are designed for volume production and tight statistical process control. We offer customers the best commercially available XRD specs (average (002): 135 arc sec and (102): 513 arc sec), low defect densities, and wafer uniformity,” says Jeremy Jones, Nitride Solutions CEO.


He continues, “We believe that our recent sales and growing sample requests validate the quality and value of our products and technology. We realise that customer’s make decisions on substrates based on performance, quality, consistency, value delivered and supply assurance. Our combination of a superior product in the AT-50 plus a growing global distribution and technical support channel will provide the best solution for these customers. The planned introduction of four- inch aluminium nitride templates and the expansion of our template product line to GaN will bring additional value to device markets.”


James H. Edgar, department head of chemical engineering and university distinguished professor at Kansas State University comments, “The AlN on sapphire templates offered by Nitride Solutions are a much lower-cost alternative of high-quality material compared to bulk AlN substrates. That these substrates are available in two-inch diameter size greatly facilitates their use by standard device fabrication tools. The availability of these AlN templates creates exciting new opportunities for improved short-wavelength optoelectronic and high-power electronic devices.”


Nitride Solutions develops and manufactures bulk and template nitride materials for the LED, laser diode and the power electronics markets. Founded in 2009, the firm’s leadership has over 35 years of experience in supplying advanced materials to global manufacturers of semiconductor, display and memory devices, combined with a total of more than 35 years in nitride process development. The company maintains strong ties to Kansas State University in Manhattan, with key employees and advisors hailing from the university, as well as UC Santa Barbara.


Nitride Solutions has achieved the first commercial sales of its new AT-50 AlN template.


Nitride is manufacturing the product in volume at its manufacturing facility in Wichita, Kansas, using its proprietary advanced HVPE process.


Troy Baker, Nitride’s research and development director, presented data at the 2013 International Conference on Nitride Semiconductors that showed commercial


October 2013 www.compoundsemiconductor.net 67


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142